Substrate processing apparatus

1. A substrate processing apparatus comprising:

a partition comprising at least one through-hole;

a conduit arranged in the partition through the through-hole;

a gas supply unit connected to the conduit; and

a low dielectric material provided between a side wall of the through-hole and the conduit,

wherein the partition comprises a first protrusion protruding toward the gas supply unit,

wherein the low dielectric material contacts one side surface of the first protrusion, and

wherein the first protrusion of the partition is located above the gas supply unit,

wherein the gas supply unit is used as an electrode to generate plasma,

wherein the partition further comprises a second protrusion between the first protrusion and the conduit,

wherein the second protrusion is symmetrically formed around the conduit,

wherein a first low dielectric material between the first protrusion and the second protrusion, and a second low dielectric material between the conduit and the second protrusion are provided, and

wherein the gas supply unit under the partition is mechanically supported by the first protrusion and the second protrusion of the partition.

2. The substrate processing apparatus of claim 1 , wherein the low dielectric material comprises air.

3. The substrate processing apparatus of claim 2 , wherein at least one path for connecting the air and outside is formed in the substrate processing apparatus.

4. The substrate processing apparatus of claim 3 , wherein the path is formed between the partition and the conduit.

5. The substrate processing apparatus of claim 3 , wherein the path is formed in the partition.

6. The substrate processing apparatus of claim 1 , wherein the partition comprises a step portion located in an area where the through-hole is formed,

the conduit comprises a flange, and

the conduit is connected to the partition through a coupling between the flange and the step portion.

7. The substrate processing apparatus of claim 6 , wherein a path communicated with outside air is formed between the step portion and the flange.

8. The substrate processing apparatus of claim 1 , further comprising an insulating plate arranged between the partition and the gas supply unit,

wherein the first protrusion and the second protrusion contact with the insulating plate, and

wherein the gas supply unit is mechanically supported by the first protrusion and the second protrusion through the insulating plate.

9. The substrate processing apparatus of claim 8 , further comprising a radio frequency (RF) rod connected to the gas supply unit by penetrating through at least part of the partition and the insulating plate.

10. The substrate processing apparatus of claim 1 , wherein the through-hole has a first diameter in a first region and a second diameter greater than the first diameter in a lower portion of the first region.

11. The substrate processing apparatus of claim 10 , wherein a diameter of at least part of the through-hole continuously increases toward the gas supply unit.

12. The substrate processing apparatus of claim 11 , wherein a side section profile of at least part of the through-hole has a bell-like shape.

13. The substrate processing apparatus of claim 1 , wherein the low dielectric material prevents generation of parasitic plasma between the partition and the gas supply unit.

14. A substrate processing apparatus comprising:

a partition comprising at least one through-hole;

an insulating conduit arranged in the partition through the through-hole;

a gas supply unit connected to the insulating conduit;

an insulating plate arranged between the partition and the gas supply unit; and

a radio frequency (RF) rod connected to the gas supply unit by penetrating through the insulating plate,

wherein the partition comprises:

at least one of first protrusion contacting the insulating plate; and

at least one of second protrusion contacting the insulating plate and arranged between the first protrusion and the insulating conduit,

the RF rod is arranged between the first protrusion and the second protrusion, and

an air-filled-space is formed between the partition and the insulating plate, between a side wall of the through-hole and the insulating conduit, and between the first protrusion and the second protrusion,

wherein the first protrusion protrudes toward the gas supply unit,

wherein the air-filled-space contacts one side surface of the first protrusion,

wherein the first protrusion of the partition is located above the gas supply unit, and

wherein the gas supply unit is used as an electrode to generate plasma,

wherein the second protrusion between the first protrusion and the insulating conduit is symmetrically formed around the insulating conduit,

wherein a first air-filled space between the first protrusion and the second protrusion and a second air-filled space between the insulating conduit and the second protrusion are formed, and

wherein the first protrusion and the second protrusion contact with the insulating plate so that the first protrusion and the second protrusion contribute to mechanical stability between the partition and the insulating plate.

15. A substrate processing apparatus comprising:

a partition providing a gas supply channel;

a gas supply unit connected to the gas supply channel; and

air between the partition and the gas supply unit,

wherein the partition comprises at least one first protrusion protruding toward the gas supply unit, and

the air contacts one side surface of the first protrusion,

wherein the first protrusion of the partition is located above the gas supply unit,

wherein the gas supply unit is used as an electrode to generate plasma, and

wherein the first protrusion is arranged in an area overlapping the gas supply unit,

wherein the partition further comprises at least one second protrusion protruding toward the gas supply unit and arranged between the first protrusion and the gas supply channel,

the air is provided between the first protrusion and the second protrusion and between the gas supply channel and the second protrusion,

wherein the second protrusion between the first protrusion and the gas supply channel is symmetrically formed around the gas supply channel,

wherein a first air between the first protrusion and the second protrusion and a second air between the gas supply channel and the second protrusion are provided, and

wherein the gas supply unit under the partition is mechanically supported by the first protrusion and the second protrusion of the partition.

16. The substrate processing apparatus of claim 15 , wherein the air prevents generation of parasitic plasma between the partition the gas supply unit.

17. The substrate processing apparatus of claim 15 ,

wherein a path is formed in the second protrusion, and

wherein the first air and the second air are communicated one another through the path.

18. The substrate processing apparatus of claim 17 , further comprising a radio frequency (RF) rod connected to the gas supply unit and arranged between the first protrusion and the second protrusion.