Array substrate, display apparatus, and method of fabricating array substrate

1. An array substrate, having a plurality of first bottom-gate type thin film transistors each of which comprising a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which comprising a silicon active layer;

the array substrate comprises:

a base substrate;

a gate electrode layer on the base substrate and comprising a plurality of first gate electrodes respectively for the plurality of first bottom-gate type thin film transistors and a plurality of second gate electrodes respectively for the plurality of second bottom-gate type thin film transistors;

a gate insulating layer on a side of the gate electrode layer distal to the base substrate;

a metal oxide layer comprising a plurality of metal oxide active layers respectively for the plurality of first bottom-gate type thin film transistors, each of the plurality of metal oxide active layers on a side of the gate insulating layer distal to one of the plurality of first gate electrodes;

a polysilicon layer comprising a plurality of polycrystalline silicon active layers respectively for the plurality of second bottom-gate type thin film transistors, each of the plurality of polycrystalline silicon active layers on a side of the gate insulating layer distal to one of the plurality of second gate electrodes;

a first electrode layer; and

a second electrode layer;

wherein the first electrode layer and the second electrode layer are two different layers selected from a pixel electrode layer and a common electrode layer;

the first electrode layer is in a same layer as the gate electrode layer; and

the gate insulating layer is on a side of the gate electrode layer and the first electrode layer distal to the base substrate.

2. The array substrate of claim 1 , further comprising:

a first insulating layer on a side of the polysilicon layer distal to the gate insulating layer; and

a second insulating layer on a side of the metal oxide layer distal to the first insulating layer;

wherein the first insulating layer is between the polysilicon layer and the metal oxide layer.

3. The array substrate of claim 2 , further comprising a source-drain electrode layer comprising a plurality of first source electrodes, a plurality of first drain electrodes, a plurality of second source electrodes, and a plurality of second drain electrodes;

each of the plurality of metal oxide active layers is electrically connected to one of the plurality of first source electrodes and one of the plurality of first drain electrodes through vias extending through the second insulating layer; and

each of the plurality of polycrystalline silicon active layers is electrically connected to one of the plurality of second source electrodes and one of the plurality of second drain electrodes through vias extending through the first insulating layer and the second insulating layer.

4. The array substrate of claim 3 , further comprising a passivation layer on a side of the source-drain electrode layer distal to the second insulating layer;

a first electrode layer on a side of the passivation layer distal to the source-drain electrode layer; and

a second electrode layer on a side of the first electrode layer distal to the base substrate;

wherein the first electrode layer and the second electrode layer are two different layers selected from a pixel electrode layer and a common electrode layer.

5. The array substrate of claim 1 , further comprising a source-drain electrode layer on a side of the metal oxide layer and the polysilicon layer distal to the gate insulating layer;

the source-drain electrode layer comprising a plurality of first source electrodes, a plurality of first drain electrodes, a plurality of second source electrodes, and a plurality of second drain electrodes;

each of the plurality of metal oxide active layers is electrically connected to one of the plurality of first source electrodes and one of the plurality of first drain electrodes; and

each of the plurality of polycrystalline silicon active layers is electrically connected to one of the plurality of second source electrodes and one of the plurality of second drain electrodes.

6. The array substrate of claim 5 , wherein the plurality of first bottom-gate type thin film transistors are back channel etching type thin film transistors.

7. The array substrate of claim 5 , further comprising a first insulating layer on a side of the polysilicon layer distal to the gate insulating layer;

wherein the first insulating layer is between the polysilicon layer and the metal oxide layer; and

each of the plurality of polycrystalline silicon active layers is electrically connected to one of the plurality of second source electrodes and one of the plurality of second drain electrodes through vias extending through the first insulating layer.

8. The array substrate of claim 5 , further comprising:

a passivation layer on a side of the source-drain electrode layer distal to the gate insulating layer;

wherein the second electrode layer is on a side of the passivation layer distal to the source-drain electrode layer.

9. The array substrate of claim 1 , wherein the plurality of first bottom-gate type thin film transistors are in a display area, and the plurality of second bottom-gate type thin film transistors are in a peripheral area.

10. The array substrate of claim 1 , wherein the plurality of first bottom-gate type thin film transistors are a plurality of drive thin film transistors each of which is connected to a power supply line and an organic light emitting diode; and the plurality of second bottom-gate type thin film transistors are a plurality of switch thin film transistors each of which is connected to a data line and a gate electrode of one of the plurality of drive thin film transistors.

11. The array substrate of claim 1 , further comprising a display driver circuitry;

wherein the display driver circuitry comprises the plurality of second bottom-gate type thin film transistors.

12. A display apparatus, comprising the array substrate of claim 1 .

13. A method of fabricating an array substrate, comprising:

forming a plurality of first bottom-gate type thin film transistors each of which comprising a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which comprising a silicon active layer;

forming a gate electrode layer on a base substrate, the gate electrode layer formed to comprise a plurality of first gate electrodes respectively for the plurality of first bottom-gate type thin film transistors and a plurality of second gate electrodes respectively for the plurality of second bottom-gate type thin film transistors;

forming a gate insulating layer on a side of the gate electrode layer distal to the base substrate;

forming a metal oxide layer comprising a plurality of metal oxide active layers respectively for the plurality of first bottom-gate type thin film transistors, each of the plurality of metal oxide active layers on a side of the gate insulating layer distal to one of the plurality of first gate electrodes and; and

forming a polysilicon layer comprising a plurality of polycrystalline silicon active layers respectively for the plurality of second bottom-gate type thin film transistors, each of the plurality of polycrystalline silicon active layers on a side of the gate insulating layer distal to one of the plurality of second gate electrodes;

forming a first electrode layer; and

forming a second electrode layer;

wherein the first electrode layer and the second electrode layer are two different layers selected from a pixel electrode layer and a common electrode layer;

the first electrode layer and the gate electrode layer are formed in a same layer in a single process using a same mask plate; and

the gate insulating layer is formed on a side of the gate electrode layer and the first electrode layer distal to the base substrate.

14. The method of claim 13 , further comprising forming a first insulating layer on a side of the polysilicon layer distal to the gate insulating layer; and

forming a second insulating layer on a side of the metal oxide layer distal to the first insulating layer;

wherein the first insulating layer is formed between the polysilicon layer and the metal oxide layer.

15. The method of claim 14 , further comprising forming a source-drain electrode layer, the source-drain electrode layer is formed to comprise a plurality of first source electrodes, a plurality of first drain electrodes, a plurality of second source electrodes, and a plurality of second drain electrodes;

forming vias extending through the second insulating layer for electrically connecting each of the plurality of metal oxide active layers to one of the plurality of first source electrodes and one of the plurality of first drain electrodes; and

forming vias extending through the first insulating layer and the second insulating layer for electrically connecting each of the plurality of polycrystalline silicon active layers to one of the plurality of second source electrodes and one of the plurality of second drain electrodes.

16. The method of claim 13 , further comprising forming a source-drain electrode layer on a side of the metal oxide layer and the polysilicon layer distal to the gate insulating layer;

wherein the source-drain electrode layer is formed to comprise a plurality of first source electrodes, a plurality of first drain electrodes, a plurality of second source electrodes, and a plurality of second drain electrodes;

each of the plurality of metal oxide active layers is formed to be electrically connected to one of the plurality of first source electrodes and one of the plurality of first drain electrodes;

each of the plurality of polycrystalline silicon active layers is formed to be electrically connected to one of the plurality of second source electrodes and one of the plurality of second drain electrodes; and

channel regions of the plurality of metal oxide active layers are formed in a back channel etching process.