Semiconductor laser device and method of manufacturing the same
A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.
1. A semiconductor laser device, comprising:
a first cladding on and directly contacting a substrate, the first cladding including gallium nitride (GaN);
a light waveguide on and directly contacting the first cladding;
a third cladding on and directly contacting the first cladding, the third cladding covering each of opposite sidewalls of the light waveguide;
a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a second cladding, and a second contact pattern sequentially stacked on the light waveguide; and
first and second electrodes on the first and second contact patterns, respectively.
2. The semiconductor laser device of claim 1 , wherein the light waveguide includes silicon.
3. The semiconductor laser device of claim 1 , wherein the light waveguide includes titanium oxide (TiO 2 ).
4. The semiconductor laser device of claim 1 , wherein the light waveguide has a bar shape extending in a direction.
5. The semiconductor laser device of claim 1 , wherein the third cladding includes silicon oxide (SiO 2 ), silicon nitride (SiN), or air.
6. The semiconductor laser device of claim 1 , wherein the first cladding is doped with carbon (C) or iron (Fe).
7. The semiconductor laser device of claim 1 , further comprising a second active pattern in the first cladding.
8. The semiconductor laser device of claim 7 , wherein the second active pattern includes indium gallium nitride (InGaN), indium gallium aluminum nitride (InGaAlN), or aluminum nitride (AlN).
9. The semiconductor laser device of claim 1 ,
wherein each of the first SCH pattern, the first active pattern, and the second SCH pattern includes indium gallium aluminum arsenide (InGaAlAs), and
wherein the first and second SCH patterns are doped with n-type impurities and p-type impurities, respectively.
10. The semiconductor laser device of claim 1 , wherein the first contact pattern includes indium phosphide (InP) doped with n-type impurities, the second cladding includes indium phosphide (InP) doped with p-type impurities, and the second contact pattern includes indium gallium arsenide (InGaAs) doped with p-type impurities.
11. The semiconductor laser device of claim 1 ,
wherein portions of the first active pattern, the second SCH pattern, and the second cladding are doped with protons, so that paths of current flowing between the first and second electrodes are restricted, and
wherein the portions are not overlapping the light waveguide in a vertical direction.
12. A semiconductor laser device, comprising:
a first cladding on and directly contacting a substrate, the first cladding including gallium nitride (GaN);
first and second light waveguides on and directly contacting the first cladding, the first and second light waveguides including silicon (Si) and titanium oxide (TiO 2 ), respectively;
fourth and fifth claddings on and directly contacting the first cladding, the fourth cladding covering each of opposite sidewalls of the first light waveguide and the fifth cladding covering each of opposite sidewalls of the second light waveguide;
first and second semiconductor laser source structures on the first and second light waveguides, respectively;
first and second electrodes connected to the first semiconductor laser source structure; and
third and fourth electrodes connected to the second semiconductor laser source structure.
13. The semiconductor laser device of claim 12 ,
wherein the first semiconductor laser source structure includes a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked, and
wherein the second semiconductor laser source structure includes a third contact pattern, a third SCH pattern, a second active pattern, a fourth SCH pattern, a third cladding and a fourth contact pattern sequentially stacked.
14. The semiconductor laser device of claim 13 , further comprising a third active pattern in the first cladding, the third active pattern including indium gallium nitride (InGaN), indium gallium aluminum nitride (InGaAlN), or aluminum nitride (AlN).
15. The semiconductor laser device of claim 12 , wherein each of the first and second light waveguides has a bar shape extending in a direction.
16. The semiconductor laser device of claim 12 , wherein each of the fourth and fifth claddings includes silicon oxide (SiO 2 ), silicon nitride (SiN), or air.
17. The semiconductor laser device of claim 12 , wherein the first cladding is doped with carbon (C) or iron (Fe).
18. A semiconductor laser device, comprising:
a first cladding on a substrate, the first cladding including gallium nitride (GaN);
a light waveguide on and contacting the first cladding;
a second cladding on and contacting the first cladding, the second cladding covering opposite sidewalls of the light waveguide;
a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a third cladding, and a second contact pattern sequentially stacked on the light waveguide;
a plurality of first electrodes on the first contact pattern; and
a second electrode on the second contact pattern,
wherein an upper surface of the light waveguide is at the same vertical level as an upper surface of the second cladding, and
wherein a lower surface of the light waveguide is at the same vertical level as a lower surface of the second cladding and an upper surface of the first cladding.
19. The semiconductor laser device of claim 18 ,
wherein the first cladding is doped with carbon (C) or iron (Fe), and
wherein the second cladding includes silicon oxide (SiO 2 ), silicon nitride (SiN), or air.
20. The semiconductor laser device of claim 18 , further comprising a second active pattern in the first cladding.