Pellicle and method for producing the same
The present invention is to provide a pellicle characterized by including a pellicle film and a pellicle frame, in which the pellicle film is stretched on the pellicle frame, and the pellicle film is an annealed pellicle film, and to provide a method for producing a pellicle by stretching a pellicle film on a pellicle frame, including the step of annealing the pellicle film alone before stretching the pellicle film on the pellicle frame, annealing the pellicle after stretching the pellicle film on the pellicle frame, or annealing the pellicle film alone and the pellicle both before and after stretching the pellicle film on the pellicle frame.
1. A pellicle, comprising a pellicle film and a pellicle frame, the pellicle film being stretched on the pellicle frame, wherein a film tension (film frequency) of the pellicle film stretched on the pellicle frame is 32 Hz or more.
2. The pellicle according to claim 1 , wherein the film tension (film frequency) of the pellicle film is from 32 to 33 Hz.
3. The pellicle according to claim 1 , wherein the pellicle film is an annealed pellicle film and a temperature for an annealing treatment is from −30 to −10° C. of a glass transition temperature (Tg) of the pellicle film.
4. The pellicle according to claim 1 , wherein the pellicle film is amorphous.
5. The pellicle according to claim 1 , wherein the pellicle film is made of a cellulosic resin or a fluorine-based resin.
6. The pellicle according to claim 1 , wherein, a positional accuracy is 1 nm or less, when patterning is performed in a state that a photomask unit prepared by attaching the pellicle onto a photomask substrate is operated in a scanning motion at high speed and an overlay accuracy is evaluated by a positional displacement in a X direction and Y direction from a target position.
7. A photomask attaching a pellicle, wherein the pellicle of claim 1 is attached onto a surface of a photomask.
8. An exposure method, wherein an exposure is performed by using the photomask attaching the pellicle of claim 7 .
9. The exposure method of claim 8 , wherein the exposure is performed with an immersion exposure device by using an ArF excimer laser.
10. A manufacturing method of a semiconductor device, comprising a step of performing an exposure by using the photomask attaching a pellicle of claim 7 .
11. The manufacturing method of claim 10 , wherein the exposure is performed with an immersion exposure device by using an ArF excimer laser.
12. A manufacturing method of a liquid crystal display, comprising a step of performing an exposure by using the photomask attaching a pellicle of claim 7 .
13. The manufacturing method of claim 12 , wherein the exposure is performed with an immersion exposure device by using an ArF excimer laser.
14. A manufacturing method of an organic electroluminescence (EL) display, comprising a step of performing an exposure by using the photomask attaching a pellicle of claim 7 .
15. The manufacturing method of claim 14 , wherein the exposure is performed with an immersion exposure device by using an ArF excimer laser.