Solder-metal-solder stack for electronic interconnect

1. An electronic assembly, comprising:

a semiconductor die comprising a semiconductor surface layer having circuitry configured for a function that includes at least one redistribution layer (RDL) and bump pads provided by the RDL, the bump pads including metal pillars thereon;

a solder comprising layer stack on the pillars, the solder comprising layer stack comprising:

a bottom solder material layer including in physical contact with a top surface of the pillars;

a metal material layer on the bottom solder material layer, and

a capping solder material layer on the metal material layer,

wherein the metal material layer comprises primarily copper or an intermetallic compound (IMC) comprising layer including copper.

2. The electronic assembly of claim 1 , wherein the bottom solder material layer and the capping solder material layers both comprise tin and silver (AgSn).

3. The electronic assembly of claim 1 , wherein the pillars comprise copper pillars that are in a height range from 40 to 70 μm.

4. The electronic assembly of claim 1 , wherein the metal material layer or an integrated thickness for a precursor for the metal material layer for the IMC comprising layer has a thickness that is 0.5 μm to 4 μm.

5. The electronic assembly of claim 1 , wherein the substrate comprises a semiconductor die comprising a semiconductor surface layer having circuitry configured for a function, wherein the contact pads comprise bond pads.

6. The electronic assembly of claim 1 , further comprising a mold compound for providing encapsulation for the electronic assembly.

7. An electronic assembly, comprising:

a laminate substrate having land pads with metal pillars thereon;

a solder comprising layer stack on the pillars, the solder comprising layer stack comprising:

a bottom solder material layer including in physical contact with a top surface of the pillars;

a metal material layer on the bottom solder material layer, and

a capping solder material layer on the metal material layer,

wherein the metal material layer comprises primarily copper or an intermetallic compound (IMC) comprising layer including copper.

8. The electronic assembly of claim 7 , wherein the bottom and the capping solder material layers both comprise silver and tin (AgSn), and wherein the pillars comprise copper pillars that are in a height range from 40 to 70 μm.

9. The electronic assembly of claim 7 , further comprising a mold compound for providing encapsulation for the electronic package.

10. A method of fabricating an electronic assembly, comprising:

forming a solder comprising layer stack on pillars on contact pads of a substrate having a semiconductor surface or on land pads of a laminate substrate, the solder comprising layer stack, including:

dispensing a bottom solder material layer including in physical contact with a top side of the pillars;

forming a metal material layer including copper on the bottom solder material layer, and

dispensing a capping solder material layer on the metal material layer.

11. The method of claim 10 , wherein the bottom solder material layer and the capping solder material both comprise tin and silver (SnAg).

12. The method of claim 10 , wherein the metal material layer is thinner as compared to a thickness of the bottom solder material layer and a thickness of the capping solder material.

13. The method of claim 10 , wherein the dispensing of the bottom solder material layer and the dispensing of the capping solder material layer both comprise electroplating tin and silver (SnAg).

14. The method of claim 10 , wherein the metal material layer or an integrated thickness for a precursor copper layer for the IMC comprising layer has a thickness that is 0.5 μm to 4 μm.

15. The method of claim 10 , wherein the pillars are on the land pads of a laminate substrate.

16. A method of fabricating an electronic assembly, comprising:

forming a solder comprising layer stack on pillars on contact pads of a substrate having a semiconductor surface or on land pads of a laminate substrate, the solder comprising layer stack, including:

dispensing a bottom solder material layer including in physical contact with a top side of the pillars;

forming a metal material layer including copper on the bottom solder material layer, and

dispensing a capping solder material layer on the metal material layer;

wherein the substrate having the semiconductor surface comprises a wafer having a plurality of semiconductor die each comprising a semiconductor surface layer having circuitry configured for a function, and wherein the contact pads comprise bond pads or bump pads;

singulating the wafer to provide a plurality of the semiconductor die;

further comprising placing the semiconductor die on a leadframe having a die pad and leads or lead terminals at least two sides of the die pad, and

reflowing to diffuse metal in the metal material layer to form an intermetallic compound (IMC) comprising layer in the bottom solder material layer and in the capping solder material layer.

17. The method of claim 16 , wherein the substrate comprises a semiconductor die comprising a semiconductor surface layer having circuitry configured for a function that includes at least one redistribution layer (RDL), and wherein the contact pads comprise bump pads provided by the RDL.

18. The method of claim 16 , further comprising forming a mold compound for providing encapsulation for the electronic assembly.