Array substrate and method for manufacturing the same

1. An array substrate comprising:

a substrate having first regions for forming pixels and second regions located between the first regions;

light shielding portions located within portions of the second regions adjacent to the first regions on the substrate;

pixel defining portions located within the second regions; and

a conductive layer located on the substrate and located between the pixel defining portions,

wherein at least a side surface of the light shielding portion adjacent to the first region is not covered by the pixel defining portion,

wherein the second region comprises a central region and a peripheral region surrounding the central region,

wherein the light shielding portion is located only within the peripheral region,

wherein an entire lower surface of the light shielding portion, an entire lower surface of the pixel defining portion, and an entire lower surface of the conductive layer are flush with each other, and

wherein an entire upper surface of the conductive layer is not covered by the light shielding portion and the pixel defining portion,

wherein an orthographic projection of the conductive layer on the substrate doesn't overlap with an orthographic projection of the light shielding portion on the substrate and an orthographic projection of the pixel defining portion on the substrate, and

wherein an area of the conductive layer along a plane parallel to the substrate is equal to an area of the first region and less than an area of an opening region defined by the pixel defining portion.

2. The array substrate according to claim 1 , wherein the pixel defining portion covers at least a portion of a top surface of the light shielding portion and a side surface of the light shielding portion away from the first region.

3. The array substrate according to claim 2 , wherein a ratio of a dimension of the pixel defining portion in a direction perpendicular to the substrate to a dimension of the light shielding portion in a direction perpendicular to the substrate is about 5:1 to 15:1.

4. The array substrate according to claim 2 , wherein the light shielding portion has a dimension of about 0.1 to 0.5 μm in a direction perpendicular to the substrate and a dimension of about 2 to 10 μm in a direction parallel to the substrate.

5. The array substrate according to claim 1 , wherein a material of the pixel defining portion comprises a negative photoresist, and wherein the light shielding portion can absorb a light having a sensitive wavelength of the negative photoresist.

6. The array substrate according to claim 5 , wherein the negative photoresist is a photoresist sensitive to ultraviolet light, and wherein a material of the light shielding portion comprises a material absorbing the ultraviolet light.

7. The array substrate according to claim 6 , wherein the material absorbing the ultraviolet light comprises one of a metal oxide and a carbon-containing material.

8. The array substrate according to claim 7 , wherein the metal oxide comprises one of titanium oxide and lead oxide, and wherein the carbon-containing material comprises one of carbon black and carbon nanotubes.

9. The array substrate according to claim 6 , wherein the material of the pixel defining portion comprises at least one of polyimide, polymethyl methacrylate, fluorinated polyimide, and fluorinated polymethyl methacrylate.

10. A method for manufacturing an array substrate, the method comprising:

providing a substrate having first regions for forming pixels and second regions located between the first regions;

forming a conductive layer within the first region on the substrate;

forming light shielding portions within portions of the second regions adjacent to the first regions on the substrate; and

forming pixel defining portions within the second regions,

wherein at least a side surface of the light shielding portion adjacent to the first region is not covered by the pixel defining portion,

wherein the second region comprises a central region and a peripheral region surrounding the central region,

wherein the light shielding portion is located only within the peripheral region,

wherein an entire lower surface of the light shielding portion, an entire lower surface of the pixel defining portion, and an entire lower surface of the conductive layer are flush with each other, and

wherein an entire upper surface of the conductive layer is not covered by the light shielding portion and the pixel defining portion,

wherein an orthographic projection of the conductive layer on the substrate doesn't overlap with an orthographic projection of the light shielding portion on the substrate and an orthographic projection of the pixel defining portion on the substrate, and

wherein an area of the conductive layer along a plane parallel to the substrate is equal to an area of the first region and less than an area of an opening region defined by the pixel defining portion.

11. The method according to claim 10 , wherein forming the light shielding portions comprises:

forming a light shielding material layer on the substrate, wherein a material of the light shielding material layer comprises a material absorbing ultraviolet light; and

patterning the light shielding material layer to form the light shielding portions within the portions of the peripheral regions of the second regions adjacent to the first regions on the substrate.

12. The method according to claim 10 , wherein forming the pixel defining portions comprises:

forming a pixel defining material layer on the substrate and the light shielding portions; and

exposing and developing the pixel defining material layer to remove a portion of the pixel defining material layer located within the first region, to expose a side surface of the light shielding portion adjacent to the first region.

13. The method according to claim 12 , wherein a material of the pixel defining portion comprises a negative photoresist, and wherein the light shielding portion can absorb a light having a sensitive wavelength of the negative photoresist.

14. The method according to claim 13 , wherein the negative photoresist is a photoresist sensitive to ultraviolet light.