Memory device having a ring heater
View Patent ↗A semiconductor device includes a base structure of a memory device including a first electrode, first dielectric material having a non-uniform etch rate disposed on the base structure, a via within the first dielectric material, and a ring heater within the via on the first electrode. The ring heater has a geometry based on a shape of the via that produces a resistance gradient.
1. A semiconductor device, comprising:
a base structure of a memory device including a first electrode;
first dielectric material having a non-uniform etch rate disposed on the base structure;
a via within the first dielectric material; and
a ring heater disposed within the via on the first electrode, the ring heater having a geometry based on a shape of the via that produces a resistance gradient, the via being a cone-shaped via formed within an opening within the first dielectric layer to the first electrode.
2. The device of claim 1 , wherein the first dielectric material and the ring heater are selected from the group consisting of: first dielectric material having an etch rate gradient and a ring heater having a cone shape, and first dielectric material including a plurality of dielectric layers having different etch properties and a ring heater having a staircase shape.
3. The device of claim 1 , further comprising second dielectric material disposed within a region defined by the ring heater.
4. The device of claim 1 , further comprising an air gap within the via that reduces thermal or heat loss associated with the memory device.
5. The device of claim 1 , further comprising:
a phase-change material layer disposed on the first dielectric material and the ring heater; and
a second electrode disposed on the phase-change material layer.
6. A semiconductor device, comprising:
a base structure of a memory device including a first electrode;
first dielectric material having a non-uniform etch rate disposed on the base structure;
a via within the first dielectric material; and
a ring heater disposed within the via on the first electrode, the ring heater having a geometry based on a shape of the via that produces a resistance gradient,
wherein the first dielectric material and the ring heater are selected from the group consisting of: first dielectric material having an etch rate gradient and a ring heater having a cone shape, and first dielectric material including a plurality of dielectric layers having different etch properties and a ring heater having a staircase shape.
7. The device of claim 6 , further comprising second dielectric material disposed within a region defined by the ring heater.
8. The device of claim 6 , further comprising an air gap within the via that reduces thermal or heat loss associated with the memory device.
9. The device of claim 6 , further comprising:
a phase-change material layer disposed on the first dielectric material and the ring heater; and
a second electrode disposed on the phase-change material layer.