IP Library › Granted Patent US 11,242,251
Granted Patent B2
US 11,242,251 · App. 16/343,059 · Granted Feb 8, 2022

High-pressure homogenizer and method for manufacturing graphene using the same

Inventors: Eun Jeong Kim (Daejeon, KR); Kwang Hyun Yoo (Daejeon, KR); Ye Hoon Im (Daejeon, KR); In Young Kim (Daejeon, KR); Won Jong Kwon (Daejeon, KR)
C01B32/19B01F5/0664B01F13/0059B01J19/006B01J19/0093B01F5/102B01J2219/0086B01J2219/00765B01J2219/00889
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Quick Facts
Patent No.
US 11,242,251
App. No.
16/343,059
Granted
Feb 8, 2022
Kind
B2
Abstract

Provided a high-pressure homogenizer comprising a channel module comprising a microchannel through which an object for homogenization passes, wherein the microchannel is provided with a first flow channel and a second flow channel sequentially arranged along the direction through which the object passes, the first flow channel is provided with a plurality of first baffles disposed so as to partition the microchannel into a plurality of spaces, the second flow channel is provided with a plurality of second baffles disposed so as to partition the microchannel into a plurality of spaces, and at least one of the first baffles is provided to be positioned between two adjacent second baffles.

Claims (30)

1. A high-pressure homogenizer comprising:

a channel module comprising a microchannel through which an object for homogenization passes,

wherein the microchannel is provided with a first flow channel and a second flow channel sequentially arranged along the direction through which the object passes,

the first flow channel is provided with a plurality of first baffles disposed so as to partition the microchannel into a plurality of spaces,

the second flow channel is provided with a plurality of second baffles disposed so as to partition the microchannel into a plurality of spaces, and

at least one of the first baffles is provided to be positioned between two adjacent second baffles,

wherein the microchannel has a rectangular cross section perpendicular to the moving direction of the object for homogenization,

wherein the rectangular cross section of the microchannel is a rectangular shape having a width larger than a height, and

wherein the microchannel has a ratio of width to height of 2:1 to 10:1.

2. The high-pressure homogenizer according to claim 1 ,

wherein the first and second baffles are each provided so as to partition the microchannel into two spaces along the width direction or the height direction.

3. The high-pressure homogenizer according to claim 1 ,

wherein an interval between two adjacent first baffles is equal to an interval between two adjacent second baffles.

4. The high-pressure homogenizer according to claim 1 ,

wherein an interval between two adjacent first baffles is different from an interval between two adjacent second baffles.

5. The high-pressure homogenizer according to claim 1 ,

wherein a length of the first baffle and a length of the second baffle are the same.

6. The high-pressure homogenizer according to claim 1 ,

wherein a length of the first baffle and a length of the second baffle are different.

7. The high-pressure homogenizer according to claim 1 ,

wherein the channel module is provided so that the object passes through respective spaces partitioned by the first and second baffles.

8. The high-pressure homogenizer according to claim 1 ,

wherein the microchannel has a length of 2 mm to 1000 mm.

9. The high-pressure homogenizer according to claim 1 ,

wherein the microchannel has constant flow areas of the first flow channel and the second flow channel along the moving direction of the object.

10. The high-pressure homogenizer according to claim 1 ,

wherein the microchannel has a sectional area of 1.0×10 2 μm 2 to 1.0×10 8 μm 2 .

11. A method for manufacturing graphene using the high-pressure homogenizer according to claim 1 , comprising steps of:

supplying a solution containing graphite to the channel module; and

applying a pressure of 100 to 3000 bar to the channel module to pass the solution containing graphite.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2019
From: KIM, EUN JEONG; YOO, KWANG HYUN; IM, YE HOON; KIM, IN YOUNG; KWON, WON JONG
To: LG CHEM, LTD.
Reel/Frame 048983/0113 →
Priority Claims (1)
KR 10-2016-0134895 · Oct 18, 2016 · national
Continuity (1)
Related Publication 20190284053A1 · Sep 19, 2019