Light emitting diode and electroluminescent display device including the same
A light emitting diode comprises first and second electrodes facing each other; a first charge generation layer between the first and second electrodes; a first emitting stack including a first emitting material layer between the first electrode and the first charge generation layer and a first electron transporting layer between the first emitting material layer and the first charge generation layer; and a second emitting stack including a second emitting material layer between the first charge generation layer and the second electrode and a second electron transporting layer between the second emitting material layer and the second electrode, wherein the first charge generation layer has an electron mobility lower than that of the first electron transporting layer.
1. A light emitting diode, comprising:
first and second electrodes facing each other;
a first charge generation layer between the first and second electrodes;
a first emitting stack including a first emitting material layer between the first electrode and the first charge generation layer and a first electron transporting layer between the first emitting material layer and the first charge generation layer; and
a second emitting stack including a second emitting material layer between the first charge generation layer and the second electrode and a second electron transporting layer between the second emitting material layer and the second electrode,
wherein the first charge generation layer has an electron mobility greater than that of the first electron transporting layer.
2. The light emitting diode according to claim 1 , wherein the electron mobility of the first charge generation layer is in a range of 5*10 −5 cm 2 /Vs˜1*10 −4 cm 2 /Vs, and the electron mobility of the first electron transporting layer is in a range of 1*10 −6 cm 2 /Vs˜1*10 −5 cm 2 /Vs.
3. The light emitting diode according to claim 1 , wherein the first electron transporting layer has a thickness smaller than that of the second electron transporting layer.
4. The light emitting diode according to claim 3 , wherein the thickness of the first electron transporting layer is in a range of 30 to 150 Å.
5. The light emitting diode according to claim 1 , wherein the first electron transporting layer has a thickness smaller than that of the first charge generation layer.
6. The light emitting diode according to claim 1 , wherein the first electron transporting layer includes a material of Formula 1, and the first charge generation layer includes a material of Formula 2:
wherein R is C6 to C30 aryl group, and L is C6 to C30 arylene group.
7. The light emitting diode according to claim 6 , wherein the first electron transporting layer includes a material of Formula 3, and the first charge generation layer includes a material of Formula 4:
8. The light emitting diode according to claim 1 , further comprising:
a second charge generation layer between the first charge generation layer and the second emitting stack; and
a third emitting stack between the first charge generation layer and the second charge generation layer and including a third emitting material layer and a third electron transporting layer between the third emitting material layer and the second charge generation layer.
9. The light emitting diode according to claim 8 , wherein the first electron transporting layer has a thickness smaller than that of the third electron transporting layer.
10. The light emitting diode according to claim 8 , wherein the first electron transporting layer has a thickness smaller than that of the second charge generation layer.
11. An electroluminescent display device, comprising:
a substrate;
a light emitting diode on the substrate, the emitting diode comprising:
first and second electrodes facing each other;
a first charge generation layer between the first and second electrodes;
a first emitting stack including a first emitting material layer between the first electrode and the first charge generation layer and a first electron transporting layer between the first emitting material layer and the first charge generation layer; and
s second emitting stack including a second emitting material layer between the first charge generation layer and the second electrode and a second electron transporting layer between the second emitting material layer and the second electrode;
a thin film transistor positioned between the substrate and the light emitting diode and electrically connected to the light emitting diode,
wherein the first charge generation layer has an electron mobility greater than that of the first electron transporting layer.
12. The electroluminescent display device according to claim 11 , wherein the electron mobility of the first charge generation layer is in a range of 5*10 −5 cm 2 /Vs˜1*10 −4 cm 2 /Vs, and the electron mobility of the first electron transporting layer is in a range of 1*10 −6 cm 2 /Vs˜1*10 −5 cm 2 /Vs.
13. The electroluminescent display device according to claim 11 , wherein the first electron transporting layer has a thickness smaller than that of the second electron transporting layer.
14. The electroluminescent display device according to claim 13 , wherein the thickness of the first electron transporting layer is in a range of 30 to 150 Å.
15. The electroluminescent display device according to claim 11 , wherein the first electron transporting layer has a thickness smaller than that of the first charge generation layer.
16. The electroluminescent display device according to claim 11 , wherein the first electron transporting layer includes a material of Formula 1, and the first charge generation layer includes a material of Formula 2:
wherein R is C6 to C30 aryl group, and L is C6 to C30 arylene group.
17. The electroluminescent display device according to claim 16 , wherein the first electron transporting layer includes a material of Formula 3, and the first charge generation layer includes a material of Formula 4:
[Formula 3]
18. The electroluminescent display device according to claim 11 , wherein the light emitting diode further comprises:
a second charge generation layer between the first charge generation layer and the second emitting stack; and
a third emitting stack between the first charge generation layer and the second charge generation layer and including a third emitting material layer and a third electron transporting layer between the third emitting material layer and the second charge generation layer.
19. The electroluminescent display device according to claim 18 , wherein the first electron transporting layer has a thickness smaller than that of the third electron transporting layer, and the first electron transporting layer has a thickness smaller than that of the second charge generation layer.
20. The electroluminescent display device according to claim 11 , further comprising:
red, green and blue color filter patterns respectively corresponding to red, green and blue pixel regions,
wherein the light emitting diode corresponds to all of the red, green and blue pixel regions, and
wherein the red, green and blue color filter patterns are positioned between the substrate and the light emitting diode or over the light emitting diode.