Cobalt precursor and methods for manufacture using the same

1. A method for manufacturing a cobalt-containing layer on a substrate, the method comprising:

performing a deposition process using a cobalt precursor comprising at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2:

wherein R1 and R3 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl, and

R2 is hydrogen, or substituted or unsubstituted, linear or branched (C1-C6)alkyl,

wherein R4, R5 and R6 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl.

2. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises:

vaporizing the cobalt precursor in a container; and

supplying the vaporized cobalt precursor through a carrier gas into a process chamber which includes the substrate.

3. The method for manufacturing a cobalt-containing layer of claim 2 , wherein the vaporization of the cobalt precursor is performed at a temperature of about 0° C. to about 40° C.

4. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises thermal chemical vapor deposition (CVD), plasma-enhanced (PE) CVD, photo CVD, photoplasma CVD or atomic layer deposition (ALD).

5. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises supplying a reactant gas into a process chamber, and

the reactant gas is at least one selected from the group consisting of hydrogen (H 2 ), oxygen (O 2 ), ozone (O 3 ), nitrogen dioxide (NO 2 ), nitrogen monoxide (NO), vapor (H 2 O), hydrogen peroxide (H 2 O 2 ), acetic acid, hydrazine (N 2 H 4 ), ammonia (NH 3 ), silane (SiH 4 ), boran (BH 3 ), diboran (B 2 H 6 ) and phosphine (PH 3 ).

6. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises:

supplying the cobalt precursor on an intermediate layer on the substrate to form the cobalt-containing layer on the intermediate layer, and

the intermediate layer comprises a silicon oxide layer, a silicon nitride layer, a copper oxide layer, a titanium nitride layer, a titanium oxide layer, a tantalum nitride layer, a tantalum oxide layer, a ruthenium oxide layer, a zirconium oxide layer, a hafnium oxide layer or a lanthanum oxide layer.

7. The method for manufacturing a cobalt-containing layer of claim 1 , wherein:

R1 and R3 are each independently branched (C3-C4)alkyl, and

R2 is (C1-C2)alkyl.

8. The method for manufacturing a cobalt-containing layer of claim 1 , wherein R4, R5 and R6 are each independently (C1-C3)alkyl.

9. A method for manufacturing a semiconductor device, the method comprising:

forming an interlayer insulating layer on a substrate;

patterning the interlayer insulating layer to form a recess; and

forming a cobalt-containing layer on the recess,

wherein the forming of the cobalt-containing layer comprises performing a deposition process using a cobalt precursor comprising at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2:

wherein R1 and R3 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl, and

R2 is hydrogen, or substituted or unsubstituted, linear or branched (C1-C6)alkyl,

wherein R4, R5 and R6 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl.

10. The method for manufacturing a semiconductor device of claim 9 , further comprising: forming a barrier layer directly on the recess and forming the cobalt-containing layer on the barrier layer,

wherein the barrier layer comprises at least one of a titanium nitride layer, a tungsten nitride layer or a tantalum nitride layer.

11. The method for manufacturing a semiconductor device of claim 9 , further comprising:

forming a metal layer on the cobalt-containing layer,

wherein the metal layer comprises a metal selected from the group consisting of aluminum, copper, tungsten and molybdenum.

12. The method for manufacturing a semiconductor device of claim 9 , further comprising:

patterning an upper portion of the substrate to form an active pattern;

forming a gate electrode crossing the active pattern; and

forming a source/drain region in an upper portion of the active pattern,

wherein the recess exposes the gate electrode or the source/drain region.

13. The method for manufacturing a semiconductor device of claim 9 , further comprising:

forming transistors on the substrate; and

forming contacts connected to the transistors,

wherein the interlayer insulating layer covers the contacts, and

the recess exposes at least one of the contacts.

14. The method for manufacturing a semiconductor device of claim 9 , wherein:

R1 and R3 are each independently branched (C3-C4)alkyl, and

R2 is (C1-C2)alkyl.

15. The method for manufacturing a semiconductor device of claim 9 , wherein R4, R5 and R6 are each independently (C1-C3)alkyl.