Light emitting display panel and electronic device including the same
By controlling the optical thickness of the upper stacked structure disposed on the display panel, it is possible to periodically control the tristimulus value of Xr and the tristimulus value of Yg emitted from the electronic device. The optical thickness is determined by the thickness and refractive index of the upper stacked structure. This control may reduce the tristimulus value of Xr periodically or increase the tristimulus value of Yg periodically. The tristimulus value of Xr may be periodically decreased and the tristimulus value of Yg may be periodically increased at the same time.
1. A light emitting display panel comprising:
a base layer;
a light emitting element including a first electrode disposed on the base layer, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer; and
a stacked structure disposed on the light emitting element and including a plurality of layers,
wherein a first layer to a q-th layer among the plurality of layers satisfy at least one of the following Equations 1 and 2, the first layer contacts with the second electrode,
2
π
m
+
2
π
3
<
2
n
1
,
z
d
1
1
-
1
n
1
2
sin
2
θ
air
2
π
λ
+
2
n
2
,
z
d
2
1
-
1
n
2
2
sin
2
θ
air
2
π
λ
…
2
n
q
,
z
d
q
1
-
1
n
q
2
sin
2
θ
air
2
π
λ
+
ϕ
1
,
CE
+
ϕ
q
,
q
+
1
<
2
π
m
+
4
π
3
[
Equation
1
]
2
π
m
+
5
π
3
<
2
n
1
,
z
d
1
1
-
1
n
1
2
sin
2
θ
air
2
π
λ
+
2
n
2
,
z
d
2
1
-
1
n
2
2
sin
2
θ
air
2
π
λ
…
2
n
q
,
z
d
q
1
-
1
n
q
2
sin
2
θ
air
2
π
λ
+
ϕ
1
,
CE
+
ϕ
q
,
q
+
1
<
2
π
(
m
+
1
)
+
π
3
[
Equation
2
]
in Equations 1 and 2, m is 0 and a natural number, n1,z to nq,z are refractive indices in a thickness direction of each of the first layer to the q-th layer, d1 to dq are respective thicknesses of the first layer to the q-th layer, θair is 20° to 40°, λ in Equation 1 is 610 nm or more and 645 nm or less, and λ in Equation 2 is 515 nm or more and 545 nm or less,
in Equations 1 and 2, Φ1,CE is the following Equation 3,
ϕ
1
,
CE
=
tan
-
1
(
Im
(
r
1
,
CE
)
Re
(
r
1
,
CR
)
)
,
[
Equation
3
]
in Equation 3, r1,CE is defined as a reflection coefficient of the first layer for the light emitting element, and if Im(r1,CE)≥0, 0≤ϕ1,CE≤π and if Im(r1,CE)<0, π<ϕ1,CE<2π, and
in Equations 1 and 2, if the refractive index of the q-th layer is larger than the refractive index of a q+1th layer, Φq,q+1 is π and if the refractive index of the q-th layer is smaller than the refractive index of the q+1th layer, Φq,q+1 is 0.
2. The light emitting display panel of claim 1 , wherein the light emitting element comprises a first light emitting element for generating blue light having a peak in a range of 440 nm to 460 nm; a second light emitting element for generating green light having a peak in a range of 515 nm to 545 nm; and a third light emitting element for generating red light having a peak in a range of 610 nm to 645 nm.
3. The light emitting display panel of claim 1 , wherein the first layer to the q-th layer of the stacked structure satisfy Equation 4 below,
n 1,z +d 1 +n 2,z d 2 . . . n q,z d q ≤4000 nm. [Equation 4]
4. The light emitting display panel of claim 3 , wherein in Equation 4, q is 3 to 5.
5. The light emitting display panel of claim 1 , wherein the stacked structure comprises a first organic layer, a first inorganic layer, a second inorganic layer, a second organic layer, and a third inorganic layer, which are sequentially stacked.
6. The light emitting display panel of claim 5 , wherein the q-th layer is the second inorganic layer.
7. The light emitting display panel of claim 6 , wherein the first organic layer comprises the same organic material as the light emitting element,
wherein the thicknesses of the first organic layer and the first inorganic layer are 300 nm or less.
8. The light emitting display panel of claim 7 , wherein the first inorganic layer comprises lithium fluoride.
9. The light emitting display panel of claim 6 , wherein each of the second inorganic layer and the third inorganic layer comprises at least one of silicon nitride, silicon oxynitride, silicon oxide, a titanium oxide layer, and aluminum oxide.
10. The light emitting display panel of claim 6 , wherein a refractive index of the second inorganic layer is 1.5 to 1.9, and a thickness of the second inorganic layer is 800 nm to 2000 nm.
11. The light emitting display panel of claim 6 , wherein a refractive index of the second organic layer is 1.4 to 1.8, and a thickness of the second organic layer is 1000 nm to 12000 nm.
12. The light emitting display panel of claim 5 , wherein the q-th layer is the second organic layer.
13. The light emitting display panel of claim 12 , wherein a refractive index of the second organic layer is 1.4 to 1.8, a thickness of the second organic layer is 1000 nm to 2500 nm,
wherein a refractive index of the second inorganic layer is 1.5 to 1.9, and a thickness of the second inorganic layer is 500 nm to 1600 nm.
14. The light emitting display panel of claim 1 , wherein the stacked structure comprises a first organic layer disposed directly on the light emitting element, a first inorganic layer disposed directly on the first organic layer, and an second organic layer and an second inorganic layer disposed on the first inorganic layer,
wherein the q-th layer is the second organic layer or the second inorganic layer.