Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.
1. A combiner and distributor comprising:
a first plurality of branch circuits configured to receive a modified radio frequency (RF) signal of a first frequency,
wherein each of the first plurality of branch circuits includes a tuning element configured to tune a corresponding portion of the modified RF signal of the first frequency to output a plurality of RF signals of the first frequency;
a second plurality of branch circuits configured to receive a modified RF signal of a second frequency,
wherein each of the second plurality of branch circuits includes a tuning element configured to tune a corresponding portion of the modified RF signal of the second frequency to output a plurality of RF signals of the second frequency; and
a plurality of output branch circuits configured to combine each of the plurality of RF signals of the first frequency with a corresponding one of the plurality of RF signals of the second frequency to distribute a plurality of output signals to a plurality of plasma processing stations.
2. The combiner and distributor of claim 1 , wherein the tuning element of one of the first plurality of branch circuits is configured to tune the corresponding portion of the modified RF signal of the first frequency to balance a plasma impedance associated with a corresponding one of the plurality of plasma processing stations with another plasma impedance associated with another one of the plurality of plasma processing stations.
3. The combiner and distributor of claim 2 , wherein the tuning element of one of the second plurality of branch circuits is configured to tune the corresponding portion of the modified RF signal of the second frequency to balance the plasma impedance associated with the corresponding one of the plurality of plasma processing stations with the other plasma impedance associated with the other one of the plurality of plasma processing stations.
4. The combiner and distributor of claim 3 , wherein the plasma impedance associated with the corresponding one the plurality of plasma processing stations is balanced with the other plasma impedance associated with the other one of the plurality of plasma processing stations when the plasma impedance associated with the corresponding one the plurality of plasma processing stations is within a pre-determined range from the other plasma impedance associated with the other one of the plurality of plasma processing stations.
5. The combiner and distributor of claim 1 , wherein the tuning element of one of the first plurality of branch circuits is a variable capacitor and the tuning element of one of the second plurality of branch circuits is a variable capacitor.
6. The combiner and distributor of claim 1 , wherein the first frequency is lower than the second frequency.
7. The combiner and distributor of claim 1 , wherein the first plurality of branch circuits are configured to be coupled to a first impedance matching network to receive the modified RF signal of the first frequency from the first impedance matching network, and the second plurality of branch circuits are configured to be coupled to a second impedance matching network to receive the modified RF signal of the second frequency from the second impedance matching network.
8. The combiner and distributor of claim 1 , wherein the first plurality of branch circuits includes a plurality of inductors and a plurality of blocking circuits, wherein the plurality of blocking circuits are configured to block RF signals of the second frequency.
9. The combiner and distributor of claim 8 , wherein each of the plurality of blocking circuits includes a parallel arrangement of an inductor and a capacitor.
10. The combiner and distributor of claim 1 , wherein the tuning element of one of the first plurality of branch circuits is coupled in parallel to a corresponding one of a plurality of inductors.
11. The combiner and distributor of claim 1 , wherein the tuning element of one of the second plurality of branch circuits is coupled to a corresponding one of a plurality of capacitors.
12. The combiner and distributor of claim 1 , wherein to tune the corresponding portion of the modified RF signal of the first frequency, the tuning element of one of the first plurality of branch circuits is configured to change an amplitude or a phase or a combination thereof of an RF signal output by the tuning element of the one of the first plurality of branch circuits.
13. The combiner and distributor of claim 1 , wherein to tune the corresponding portion of the modified RF signal of the second frequency, the tuning element of a corresponding one of the second plurality of branch circuits is configured to change an amplitude or a phase or a combination thereof of an RF signal output by the tuning element of the one of the second plurality of branch circuits.
14. A plasma system comprising:
a first radio frequency (RF) generator configured to generate a first RF signal of a first frequency;
a second RF generator configured to generate a second RF signal of a second frequency;
a first impedance matching network coupled to the first RF generator to receive the first RF signal to provide a first modified RF signal of the first frequency;
a second impedance matching network coupled to the second RF generator to receive the second RF signal to provide a second modified RF signal of the second frequency;
a combiner and distributor coupled to the first and second impedance matching networks; and
a plurality of plasma processing stations coupled to the combiner and distributor,
wherein the combiner and distributor includes:
a first plurality of branch circuits configured to receive the first modified RF signal,
wherein each of the first plurality of branch circuits includes a tuning element configured to tune a corresponding portion of the first modified RF signal to output a plurality of RF signals of the first frequency;
a second plurality of branch circuits configured to receive the second modified RF signal of the second frequency,
wherein each of the second plurality of branch circuits includes a tuning element configured to tune a corresponding portion of the second modified RF signal to output a plurality of RF signals of the second frequency; and
a plurality of output branch circuits configured to combine each of the plurality of RF signals of the first frequency with a corresponding one of the plurality of RF signals of the second frequency to distribute a plurality of output signals to the plurality of plasma processing stations.
15. The plasma system of claim 14 , wherein the tuning element of one of the first plurality of branch circuits is configured to tune the corresponding portion of the first modified RF signal of the first frequency to balance a plasma impedance associated with a corresponding one of a plurality of plasma processing stations with another plasma impedance associated with another one of the plurality of plasma processing stations.
16. The plasma system of claim 15 , wherein the tuning element of one of the second plurality of branch circuits is configured to tune the corresponding portion of the second modified RF signal of the second frequency to balance the plasma impedance associated with the corresponding one of the plurality of plasma processing stations with the other plasma impedance associated with the other one of the plurality of plasma processing stations.
17. The plasma system of claim 16 , wherein the plasma impedance associated with the corresponding one the plurality of plasma processing stations is balanced with the other plasma impedance associated with the other one of the plurality of plasma processing stations when the plasma impedance associated with the corresponding one the plurality of plasma processing stations is within a pre-determined range from the other plasma impedance associated with the other one of the plurality of plasma processing stations.
18. The plasma system of claim 14 , wherein the tuning element of one of the first plurality of branch circuits is a variable capacitor and the tuning element of one of the second plurality of branch circuits is a variable capacitor.
19. A method comprising:
receiving, by a combiner and distributor, a modified radio frequency (RF) signal of a first frequency;
tuning, by the combiner and distributor, portions of the modified RF signal of the first frequency to output a plurality of RF signals of the first frequency;
receiving, by the combiner and distributor, a modified RF signal of a second frequency;
tuning, by the combiner and distributor, portions of the modified RF signal of the second frequency to output a plurality of RF signals of the second frequency; and
combining, by the combiner and distributor, each of the plurality of RF signals of the first frequency with a corresponding one of the plurality of RF signals of the second frequency to distribute a plurality of output signals to a plurality of plasma processing stations.
20. The method of claim 19 , wherein said tuning the portions of the modified RF signal of the first frequency comprises balancing a plurality of plasma impedances associated with the plurality of plasma processing stations.
21. The plasma system of claim 20 , wherein said tuning the portions of the modified RF signal of the second frequency comprises said balancing the plurality of plasma impedances associated with the plurality of plasma processing stations.
22. The plasma system of claim 21 , wherein said balancing is achieved when the plurality of plasma impedances are within a pre-determined range from each other.