Chemical vapor deposition process and coated article
Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.
1. A chemical vapor deposition process, comprising:
positioning an article having a substrate within an enclosed chamber;
a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time;
a first decomposing of the first amount of the silane during at least a portion of the first period of time; and then,
a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time; and
a second decomposing of the second amount of the silane during at least a portion of the second period of time;
wherein the chemical vapor deposition process is devoid of an inert gas purging from conclusion of the first decomposing to inception of the; and
wherein the chemical vapor deposition process produces a chemical vapor deposition coating devoid of hydrogen bubbles.
2. The chemical vapor deposition process of claim 1 , wherein the inert gas purging that the chemical vapor deposition process is devoid of from the conclusion of the first decomposing to the inception of the second introducing is noble gas purging.
3. The chemical vapor deposition process of claim 1 , wherein the inert gas purging that the chemical vapor deposition process is devoid of from the conclusion of the first decomposing to the inception of the second introducing is nitrogen purging.
4. The chemical vapor deposition process of claim 1 , wherein the enclosed vessel contains constituents of the silane from the conclusion of the first decomposing to the inception of the second introducing.
5. The chemical vapor deposition process of claim 1 , wherein the enclosed vessel contains hydrogen from the conclusion of the first decomposing to the inception of the second introducing.
6. The chemical vapor deposition process of claim 1 , comprising introducing hydrogen to the enclosed chamber from the conclusion of the first decomposing to the inception of the second introducing.
7. The chemical vapor deposition process of claim 1 , wherein the substrate is a metallic alloy.
8. The chemical vapor deposition process of claim 1 , wherein the substrate is stainless steel.
9. The chemical vapor deposition process of claim 1 , wherein the substrate is aluminum.
10. The chemical vapor deposition process of claim 1 , wherein the substrate is glass.
11. The chemical vapor deposition process of claim 1 , wherein the substrate is ceramic.
12. The chemical vapor deposition process of claim 1 , wherein the chemical vapor deposition process produces a chemical vapor deposition coating, the chemical vapor deposition coating having adhesion to the substrate that is greater than a comparative adhesion between the substrate and a comparative coating formed under the same conditions but with an inert purge between the first decomposing and the second decomposing.
13. The chemical vapor deposition process of claim 1 , wherein the chemical vapor deposition process produces a chemical vapor deposition coating, the chemical vapor deposition coating having an internal film stress that is lower than a comparative internal film stress for a comparative coating formed under the same conditions but with an inert gas purge between the first decomposing and the second decomposing.
14. The chemical vapor deposition process of claim 1 , wherein the chemical vapor deposition process includes remaining above the decomposition temperature for the silane from the first introducing through the second decomposing.
15. The chemical vapor deposition process of claim 1 , wherein the enclosed chamber contains a plurality of articles having the substrate.
16. The chemical vapor deposition process of claim 1 , wherein the substrate includes exposed surfaces not visible by line-of-site, the surfaces being coated by the chemical vapor deposition process.
17. A chemical vapor deposition process, comprising:
providing a substrate within an enclosed chamber;
a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time;
a first decomposing of the first amount of the silane during at least a portion of the first period of time; and then,
a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time; and
a second decomposing of the second amount of the silane during at least a portion of the second period of time;
wherein the chemical vapor deposition process produces a chemical vapor deposition coating devoid of hydrogen bubbles.
18. A chemical vapor deposition process, comprising:
providing a substrate within an enclosed chamber;
a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time;
a first decomposing of the first amount of the silane during at least a portion of the first period of time; and then,
a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time; and
a second decomposing of the second amount of the silane during at least a portion of the second period of time;
wherein the chemical vapor deposition process produces a chemical vapor deposition coating devoid of hydrogen bubbles;
wherein the substrate includes exposed surfaces not visible by line-of-site, the surfaces being coated by the chemical vapor deposition process.