Method of manufacturing connection structure of semiconductor chip and method of manufacturing semiconductor package
The method of manufacturing a connection structure of a semiconductor chip includes: preparing a semiconductor chip having a first surface having a connection pad disposed thereon and a second surface opposing the first surface and including a passivation layer disposed on the first surface and covering the connection pad; forming an insulating layer on the first surface of the semiconductor chip, the insulating layer covering at least a portion of the passivation layer; forming a via hole penetrating through the insulating layer to expose at least a portion of the passivation layer; exposing at least a portion of the connection pad by removing the passivation layer exposed by the via hole; forming a redistribution via by filling the via hole with a conductive material; and forming a redistribution layer on the redistribution via and the insulating layer.
1. A method of manufacturing a connection structure of a semiconductor chip, comprising:
performing a function test of a semiconductor chip through a connection pad of the semiconductor chip;
forming a passivation layer covering the connection pad;
preparing the semiconductor chip having a first surface having the connection pad disposed thereon and a second surface opposing the first surface and including the passivation layer disposed on the first surface and covering the connection pad;
forming an insulating layer on the first surface of the semiconductor chip, the insulating layer covering at least a portion of the passivation layer;
forming a via hole penetrating through the insulating layer to expose at least a portion of the passivation layer;
exposing at least a portion of the connection pad by removing the passivation layer exposed by the via hole;
forming a redistribution via by filling the via hole with a conductive material; and
forming a redistribution layer on the redistribution via and the insulating layer.
2. The method of claim 1 , wherein in the preparing of the semiconductor chip, the connection pad includes aluminum (Al).
3. The method of claim 1 , wherein in the preparing of the semiconductor chip, the passivation layer includes an oxide layer, a nitride layer, or a double layer of an oxide layer and a nitride layer.
4. The method of claim 1 , wherein in the forming of the insulating layer, the insulating layer is a photosensitive insulating layer.
5. The method of claim 1 , wherein the via hole is formed by a photolithography process.
6. The method of claim 1 , wherein the forming of the via hole is performed so that an inner wall of the via hole has a tapered or cylindrical structure.
7. The method of claim 1 , wherein in the exposing of at least a portion of the connection pad, the passivation layer is removed by dry etching.
8. The method of claim 1 , wherein in the exposing of at least a portion of the connection pad, the passivation layer is removed so that a sidewall thereof has an opening connected to an inner wall of the via hole.
9. The method of claim 8 , wherein a width of the opening is smaller than or equal to that of the via hole.
10. The method of claim 1 , wherein in the performing of the function test of the semiconductor chip, a recess is formed in a surface of the connection pad.
11. The method of claim 1 , wherein in the forming of the passivation layer, the passivation layer is closely adhered to a surface of the connection pad.
12. The method of claim 11 , wherein the passivation layer has a round portion closely adhered to a recess of the connection pad.
13. A method of manufacturing a semiconductor package comprising:
performing a function test of a semiconductor chip through a connection pad of the semiconductor chip;
forming a passivation layer covering the connection pad;
preparing the semiconductor chip having a first surface having the connection pad disposed thereon and a second surface opposing the first surface and including the passivation layer disposed on the first surface and covering the connection pad;
forming an encapsulant on the second surface of the semiconductor chip, the encapsulant covering at least a portion of the semiconductor chip;
forming an insulating layer on the first surface of the semiconductor chip, the insulating layer covering at least a portion of the passivation layer;
forming a via hole penetrating through the insulating layer to expose at least a portion of the passivation layer;
exposing at least a portion of the connection pad by removing the passivation layer exposed by the via hole;
forming a redistribution via by filling the via hole with a conductive material; and
forming a redistribution layer on the redistribution via and the insulating layer.
14. The method of claim 1 , wherein the redistribution via is formed of a conductive material.