Microwave integrated circuit
View Patent ↗Provided is a microwave integrated circuit including: a semiconductor substrate; a plurality of amplification units that are formed in the semiconductor substrate; a wiring that is formed in one layer wiring excluding an uppermost layer wiring and a lowermost layer wiring among a plurality of layer wirings formed on the semiconductor substrate and is used for supplying power to the plurality of amplification units; and a plurality of vias that connect a plurality of conductive regions formed in the layer wiring with the wiring interposed therebetween and other conductive regions formed in a region interposing the wiring in the two layer wirings immediately above and immediately below the layer wiring, in which each of the plurality of vias forms a via structure connected to the conductive regions of the lowermost layer wiring by a plurality of other vias.
1. A microwave integrated circuit, comprising:
a semiconductor substrate;
a plurality of amplification units formed in the semiconductor substrate;
a power supply line formed in one wiring layer excluding an uppermost wiring layer and a lowermost wiring layer among a plurality of wiring layers formed on the semiconductor substrate, the power supply line supplying power to the plurality of amplification units; and
a plurality of vias connecting a plurality of conductive regions formed in the one wiring layer with the power supply line interposed therebetween and other conductive regions formed in a region interposing the power supply line in two wiring layers that are immediately above and immediately below the one wiring layer,
wherein each via of the plurality of vias forms a via structure connected to at least one of the uppermost wiring layer and the lowermost wiring layer by a plurality of other vias.
2. The microwave integrated circuit according to claim 1 , wherein a length of each via of the plurality of vias along the power supply line is shorter than a length of λ/8 corresponding to a signal wavelength λ targeted by the microwave integrated circuit.
3. The microwave integrated circuit according to claim 1 , wherein an interval of the plurality of vias along the power supply line is shorter than a length of λ/8 corresponding to a signal wavelength λ targeted by the microwave integrated circuit.
4. The microwave integrated circuit according to claim 1 , wherein the vias of the plurality of vias are grounded through the uppermost wiring layer or the lowermost wiring layer.
5. The microwave integrated circuit according to claim 1 ,
wherein the semiconductor substrate has a planar shape of a rectangle and has a signal input terminal on one side of the rectangle and a signal output terminal on another side adjacent to the one side, and
wherein the signal input terminal and the signal output terminal are electrically separated by the via structure.
6. The microwave integrated circuit according to claim 1 , further comprising a plurality of other vias penetrating through the plurality of wiring layers and connecting the semiconductor substrate and the uppermost wiring layer.
7. The microwave integrated circuit according to claim 6 , wherein
the via structure further includes a plurality of additional vias formed along the plurality of other vias, and
the plurality of other vias and the plurality of additional vias are arranged in a staggered manner with respect to each other.