Bond pad structure for semiconductor device and method of forming same

1. A device comprising:

an interconnect structure over a semiconductor substrate, the interconnect structure comprising a plurality of first conductive pads;

a first dielectric layer over the interconnect structure;

a plurality of bond pad vias within the first dielectric layer, each bond pad via of the plurality of bond pad vias comprising:

a first barrier layer extending along sidewalls of the first dielectric layer and over a first conductive pad of the plurality of first conductive pads; and

a first conductive material over the first barrier layer, wherein a top surface of the first conductive material and a top surface of the first barrier layer are coplanar;

a second dielectric layer over the first dielectric layer; and

a plurality of first bond pads within the second dielectric layer, each first bond pad of the plurality of first bond pads comprising:

a second barrier layer extending along sidewalls of the second dielectric layer and on the first conductive material and the first barrier layer of a first bond pad via of the plurality of bond pad vias, wherein the second barrier layer fully covers the top surface of the first conductive material and the top surface of the first barrier layer of the first bond pad via; and

a second conductive material over the second barrier layer.

2. The device of claim 1 , further comprising a third dielectric layer extending over sidewalls of the first dielectric layer, the interconnect structure, and the semiconductor substrate.

3. The device of claim 2 , wherein the second dielectric layer extends over the third dielectric layer and the first dielectric layer.

4. The device of claim 1 , further comprising an aluminum pad within the first dielectric layer, wherein the aluminum pad contacts a first conductive pad of the plurality of first conductive pads.

5. The device of claim 4 , wherein a bond pad via of the plurality of bond pad vias contacts the aluminum pad.

6. The device of claim 1 , further comprising a passivation layer extending over the plurality of first conductive pads, the plurality of bond pad vias extending through the passivation layer.

7. The device of claim 1 , wherein adjacent first conductive pads of the plurality of first conductive pads are laterally separated by a distance that is between 2 μm and 20 μm.

8. The device of claim 1 , wherein the second barrier layer comprises titanium, titanium nitride, tantalum, or tantalum nitride.

9. A package, comprising:

a first die comprising:

a first metallization layer;

one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends between each respective first bond pad via and the first metallization layer, wherein each first barrier layer covers the sidewalls and the bottom surface of each respective first bond pad via; and

one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends between each respective first bond pad via and a respective first bond pad, wherein the bottom surface of each second barrier layer is flat; and

a second die comprising one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.

10. The package of claim 9 , wherein the first die comprises a first bonding layer, wherein the first bond pad is disposed within the first bonding layer, wherein the second die comprises a second bonding layer, wherein the second bond pad is disposed within the second bonding layer, and wherein the first bonding layer is bonded to the second bonding layer.

11. The package of claim 9 , wherein a width of the first bond pad is between 95% and 150% of a width of the second bond pad.

12. The package of claim 9 , wherein a width of the second bond pad is between 95% and 150% of a width of the first bond pad.

13. The package of claim 9 , wherein the second die further comprises a through via, wherein the through via is bonded to the first bond pad of the first die.

14. The package of claim 9 , further comprising a conductive pad on the first metallization layer, wherein the conductive pad comprises a different conductive material than the one or more first bond pad vias.

15. The package of claim 14 , wherein the conductive pad is laterally separated from an adjacent first bond pad via by a distance that is between 2 μm and 100 μm.

16. A method comprising:

forming an interconnect structure on a top surface of a semiconductor substrate, the interconnect structure comprising a first conductive pad;

forming a first dielectric layer over the interconnect structure;

etching the first dielectric layer to form a first opening exposing the first conductive pad;

depositing a first barrier layer within the first opening in the first dielectric layer;

depositing a first conductive material within the first opening and on the first barrier layer;

forming a second dielectric layer over the first dielectric layer;

etching the second dielectric layer to form a second opening exposing the first conductive material;

depositing a second barrier layer within the second opening in the second dielectric layer;

depositing a second conductive material within the second opening and on the second barrier layer; and

bonding a semiconductor die to the second dielectric layer, the semiconductor die comprising a bonding layer and a bond pad, wherein the bonding bonds the bonding layer of the semiconductor die to the second dielectric layer and bonds the bond pad of the semiconductor die to the second conductive material.

17. The method of claim 16 , further comprising:

after depositing the first conductive material, forming a sacrificial layer over the first dielectric layer and the first conductive material;

attaching the sacrificial layer to a first carrier structure;

thinning the semiconductor substrate; and

removing the first carrier structure and the sacrificial layer, wherein the second dielectric layer is formed over the first dielectric layer after the sacrificial layer is removed.

18. The method of claim 16 , further comprising:

forming a passivation layer over the interconnect structure; and

forming a conductive pad over the passivation layer, wherein the first dielectric layer is formed over the conductive pad and the passivation layer.

19. The method of claim 16 , wherein the bond pad of the semiconductor die has a lateral width that is less than that of the second conductive material.

20. The method of claim 16 , wherein the bond pad of the semiconductor die has a lateral width that is greater than that of the second conductive material.