Organic light emitting diode display
A light emitting diode display includes: a substrate; a light emitting element on the substrate; and a capping layer on the organic light emitting element and including a plurality of refractive layers each including a low refraction layer and a high refraction layer, wherein the high refraction layer includes a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the low refraction layer includes a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and wherein the second inorganic material comprises at least one selected from LiF, AlF 3 , NaF, KF, RbF, CaF 2 , SrF 2 , and YbF 2 .
1. A light emitting diode display comprising:
a substrate;
a light emitting element on the substrate; and
a capping layer on the light emitting element and comprising a low refraction layer and a high refraction layer,
wherein the high refraction layer comprises a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0,
wherein the low refraction layer comprises a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and
wherein the second inorganic material comprises YbF 2 , and
wherein the low refraction layer is disposed between the light emitting element and the high refraction layer.
2. The light emitting diode display of claim 1 ,
wherein the first inorganic material comprises at least one selected from CuI, thallium iodide (TlI), AgI, CdI 2 , HgI 2 , SnI 2 , PbI 2 , BiI a , ZnI 2 , MnI 2 , FeI t , CoI e , NiI e , aluminium iodide (AlI 3 ), thorium(IV) iodide (ThI 4 ), uranium triiodide (UI 3 ), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, CdS, ZnTe, CdTe, SnSe, CdSe, CuO, Cu 2 O, Ag 2 O, CdO, CoO, Pr 2 O 3 , Bi 2 O 3 , Fe 2 O 3 , AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
3. The light emitting diode display of claim 1 , wherein:
the low refraction layer is between the high refraction layer and the light emitting element.
4. The light emitting diode display of claim 1 , further comprising:
an encapsulation substrate on and sealing the substrate to cover the light emitting element.
5. The light emitting diode display of claim 4 , wherein:
the encapsulation substrate and the light emitting element are spaced apart from each other.
6. The light emitting diode display of claim 1 , wherein:
the light emitting element comprises:
a first electrode and a second electrode facing each other, and
a light emitting layer between the first electrode and the second electrode,
wherein the capping layer is on the second electrode.
7. The light emitting diode display of claim 6 , wherein:
the first electrode comprises a reflective layer.
8. The light emitting diode display of claim 7 , wherein:
the light emitting layer comprises a red light emitting layer, a green light emitting layer, a blue light emitting layer, and
an auxiliary layer below the blue light emitting layer.
9. The light emitting diode display of claim 8 , further comprising:
a red resonant auxiliary layer below the red light emitting layer and a green resonant auxiliary layer below the green light emitting layer.
10. The light emitting diode display of claim 8 , wherein:
the auxiliary layer comprises a compound represented by Chemical Formula 1:
wherein, in Chemical Formula 1, A1, A2, and A3 are each independently selected from an alkyl group, an aryl group, carbazole, dibenzothiophene, dibenzofuran (DBF), and biphenyl, and a, b, and c are each positive numbers of zero to four.
11. The light emitting diode display of claim 8 , wherein:
the auxiliary layer comprises a compound represented by Chemical Formula 2:
wherein, in Chemical Formula 2, a may be 0 to 3, b and c may be 0 to 3, X may be selected from O, N, or S, and each X may be the same as the other or different.
12. The light emitting diode display of claim 1 , wherein the second inorganic further material comprises RbF.
13. The light emitting diode display of claim 1 , wherein the second inorganic material further comprises SrF 2 .
14. The light emitting diode display of claim 1 , wherein the second inorganic material further comprises at least one selected from LiF, AlF3, NaF, KF, RbF, CaF 2 , and SrF 2 .
15. A light emitting diode display comprising:
a substrate;
a light emitting element on the substrate; and
a capping layer on the light emitting element and comprising a low refraction layer and a high refraction layer,
wherein the high refraction layer comprises a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0,
wherein the low refraction layer comprises a second inorganic material having a refractive index which is equal to or greater than about 1 . 0 and equal to or less than about 1.7,
wherein the second inorganic material comprises at least one selected from LiF, AlF 3, NaF, KF, RbF, SrF 2, and YbF 2, and
wherein the first inorganic material comprises at least one selected from Cul, thallium iodide (TII), Agl, CdI 2, HgI 2, SnI 2, PbI 2, Bila, ZnI 2, MnI 2, FeI 2, CoI 2, NiI 2, aluminium iodide (AlI 3 ), thorium(IV) iodide (Thl 4 ), uranium triiodide (Ul 3 ).
16. The light emitting diode display of claim 15 , wherein the first inorganic material further comprises at least one selected from MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, and SnSe.
17. The light emitting diode display of claim 15 , wherein the first inorganic material further comprises at least one selected from Ag 2 O, CoO, Pr 2 O3, and Fe 2 O 3 .
18. The light emitting diode display of claim 16 , wherein the first inorganic material further comprises at least one selected from AlAs, GaAs, InAs, GaP, InP, AIP, AlSb, GaSb, and InSb.