High-frequency device and multiplexer
A high-frequency device includes: a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers; a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate.
1. A high-frequency device comprising:
a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers;
a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate;
an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate, and
a ground terminal located on the first surface,
wherein
the terminal is a first signal terminal,
the passive element includes a first capacitor that is located in a first region of the circuit substrate, the first region being located closer to the first surface than a center in the stacking direction of the circuit substrate,
the acoustic wave element includes an acoustic wave resonator,
a first end of the first capacitor is electrically connected to the first signal terminal through the first path,
a second end of the first capacitor is electrically connected to a first end of the acoustic wave resonator through the second path, and
a second end of the acoustic wave resonator is electrically connected to the ground terminal through a third path in the circuit substrate.
2. The high-frequency device according to claim 1 , wherein
a total length of the second path and the third path is less than a sum of a thickness of the circuit substrate and a distance between the second end of the first capacitor and a second surface of the circuit substrate, the second surface being an opposite surface of the circuit substrate from the first surface.
3. The high-frequency device according to claim 1 , further comprising
a second signal terminal located on the first surface, wherein
the passive element includes a second capacitor located in the first region and an inductor located in a second region of the circuit substrate, the second region being located closer to a second surface of the circuit substrate than the center in the stacking direction of the circuit substrate, the second surface being an opposite surface of the circuit substrate from the first surface,
a first end of the second capacitor is electrically connected to the second end of the first capacitor and the first end of the acoustic wave resonator,
a second end of the second capacitor is electrically connected to the second signal terminal, and
the inductor is connected in parallel to the first capacitor and the second capacitor in a path between the first signal terminal and the second signal terminal.
4. The high-frequency device according to claim 3 , wherein
the acoustic wave resonator, the first capacitor, the second capacitor, and the inductor form a low-pass filter, and
a resonant frequency of the acoustic wave resonator is higher than a passband of the low-pass filter.
5. The high-frequency device according to claim 4 , wherein
a resonant frequency of a resonant circuit formed of the acoustic wave resonator, the second path, and the third path is higher than a resonant frequency of the acoustic wave resonator.
6. The high-frequency device according to claim 1 , further comprising
a direction identification mark located on a second surface that is an opposite surface of the circuit substrate from the first surface.
7. A multiplexer comprising:
the high-frequency device according to claim 1 .
8. A high-frequency device comprising:
a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers;
a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and
an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate,
wherein
the passive element includes a capacitor located in a first region and an inductor located in a second region, the first region being located closer to the first surface of the circuit substrate than a center in the stacking direction of the circuit substrate, the second region being located closer to a second surface of the circuit substrate than the center of the circuit substrate, the second surface being an opposite surface of the circuit substrate from the first surface,
the capacitor is electrically connected to the acoustic wave element through the second path, and
the inductor is electrically connected to the acoustic wave element through the capacitor.
9. A multiplexer comprising:
the high-frequency device according to claim 8 .
10. A high-frequency device comprising:
a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers;
a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and
an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate,
wherein
a height from the first surface to a surface furthest away from the first surface of the terminal in the stacking direction is greater than a height from the first surface to a surface furthest away from the first surface of the acoustic wave element.
11. The high-frequency device according to claim 10 , wherein
the terminal includes an outer layer made of solder, and a core having a melting point greater than a melting point of solder and covered with the outer layer, and
a width of the core in the stacking direction is greater than a height from the first surface to the surface furthest away from the first surface of the acoustic wave element.
12. A multiplexer comprising:
the high-frequency device according to claim 10 .