IP Library › Granted Patent US 11,268,209
Granted Patent B2
US 11,268,209 · App. 16/658,436 · Granted Mar 8, 2022

Seed crystal including protective film including a first layer with first filler and second layer with second filler

Inventors: Sang Ki Ko (Suwon-si, KR); Jung-Gyu Kim (Suwon-si, KR); Jung Woo Choi (Suwon-si, KR); Byung Kyu Jang (Suwon-si, KR); Kap-Ryeol Ku (Suwon-si, KR)
Assignee: SENIC INC.
C30B29/36C30B23/02C30B35/007
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Quick Facts
Patent No.
US 11,268,209
App. No.
16/658,436
Granted
Mar 8, 2022
Kind
B2
Abstract

A method for preparing a seed crystal including a protective film includes preparing i) a first layer composition of a first binder resin and a first solvent and ii) a second layer composition of a second binder resin, a filler, and a second solvent, applying the first layer composition to the rear surface of a seed crystal to form a first coating layer on the rear surface of the seed crystal and drying the first coating layer to form a first layer on the rear surface of the seed crystal, and applying the second layer composition onto the first layer to form a second coating layer on the first layer, followed by heat treating to form a second layer on the first layer wherein the first layer and the second layer are sequentially disposed on the rear surface of the seed crystal, and wherein the first layer has a thickness corresponding to 30% or less of the distance from the bottom surface of the first layer to the top surface of the second layer.

Claims (33)

1. A seed crystal comprising a protective film, comprising:

a silicon carbide seed crystal comprising a front surface and a rear surface; and a protective film located on the rear surface of the silicon carbide seed crystal,

wherein the protective film comprises:

a first layer comprising a first filler and a first binder resin and in direct contact with the rear surface of the silicon carbide seed crystal;

a second layer comprising a second binder, a graphitization product of the second binder, and a second filler, and disposed on the first layer; and

a third layer comprising a third filler and a third binder resin, and disposed on the second layer,

wherein the first layer has a thickness corresponding to 30% or less of the thickness of the protective film from the bottom surface of the first layer to the top surface of the second layer,

wherein the first layer comprises 1% by weight or less of a carbonaceous or metallic filler as the first filler, based on a total weight of the first layer,

wherein the first binder resin and the third binder resin are selected from the group consisting of a polyacrylonitrile resin, a pitch resin, a polyvinyl chloride resin, a polyacrylic resin, a furan resin, an epoxy resin, and a mixture thereof, respectively.

2. The seed crystal according to claim 1 , wherein an amount of the second filler is greater than an amount of the first filler.

3. The seed crystal according to claim 1 , further comprising a silicon carbide ingot located on the front surface of the silicon carbide seed crystal and comprising a warpage of 500 μm or less.

4. The seed crystal according to claim 1 , further comprising a silicon carbide ingot located on the front surface of the silicon carbide seed crystal and comprising a micropipe defect density of 1/cm 2 or less.

5. A method for attaching the seed crystal of claim 1 , comprising the steps of:

(a) forming the protective layer on one surface of the seed crystal;

(b) forming an adhesive layer on the protective layer; and

(c) attaching the seed crystal to a seed crystal holder through the protective layer and the adhesive layer,

wherein the step (a) comprises substeps of:

(a-1) preparing a first protective layer composition comprising the first binder resin and the first filler, a second protective layer composition comprising the second binder resin and the second filler, and a third protective layer composition comprising the third binder resin and the third filler;

(a-2) applying the first protective layer composition to the one surface of the seed crystal and heat treating the first protective layer composition to form the first layer;

(a-3) applying the second protective layer composition onto the first layer and heat treating the second protective layer composition to form the second layer; and

(a-4) applying the third protective layer composition onto the second layer and heat treating the third protective layer composition to form the third layer.

6. The method according to claim 5 , wherein the heat treating the first protective layer composition, the second protective layer composition, and the third protective layer composition comprises drying, curing, and carbonizing or graphitizing the first protective layer composition, the second protective composition, and the third protective composition.

7. The method according to claim 5 , further comprising a step of patterning a lower surface of the seed crystal holder prior to the step (c), wherein the patterned seed crystal holder comprises a surface roughness (Ra) of about 0.5 mm to about 3 mm.

8. The method according to claim 7 , wherein the lower surface of the seed crystal holder is patterned after the step (b).

9. The method according to claim 5 , wherein the protective layer comprises a greater density than the adhesive layer.

10. A method for preparing the seed crystal comprising the protective film of claim 1 , comprising the steps of:

preparing i) a first layer composition comprising the first binder resin, the first filler, and a first solvent, ii) a second layer composition comprising the second binder resin, the second filler, and a second solvent, and iii) a third layer composition comprising the third binder resin, the third filler, and a third solvent;

applying the first layer composition to the rear surface of the seed crystal and drying the first layer composition to form the first layer on the rear surface of the seed crystal;

applying the second layer composition onto the first layer and drying the second layer composition to form the second layer on the first layer; and

applying the third layer composition onto the second layer and drying the third layer composition to form the third layer on the second layer,

wherein the first layer, the second layer, and the third layer are sequentially disposed on the rear surface of the seed crystal.

11. The method according to claim 10 , wherein the second layer composition comprises 20 to 300 parts by weight of the second filler, in terms of a solid content, based on 100 parts by weight of the second binder resin.

12. The method according to claim 10 , wherein the first layer comprises a thickness of 20 μm or less.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2025
From: SENIC INC.
To: EIN CRYSTAL CO., LTD.
Reel/Frame 072990/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF CHANGE OF ADDRESS FOR ASSIGNEE PREVIOUSLY RECORDED AT REEL: 058645 FRAME: 0149. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF ADDRESS.. Recorded Apr 10, 2022
From: SENIC INC.
To: SENIC INC.
Reel/Frame 059852/0027 →
CHANGE OF ADDRESS Recorded Jan 5, 2022
From: SENIC INC.
To: SENIC INC.
Reel/Frame 058645/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2021
From: SKC CO., LTD.
To: SENIC INC.
Reel/Frame 057788/0414 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2019
From: KO, SANG KI; KIM, JUNG-GYU; CHOI, JUNG WOO; JANG, BYUNG KYU; KU, KAP-RYEOL
To: SKC CO., LTD.
Reel/Frame 050775/0659 →
Priority Claims (2)
KR 10-2018-0125843 · Oct 22, 2018 · national
KR 10-2018-0160650 · Dec 13, 2018 · national
Continuity (1)
Related Publication 20200123678A1 · Apr 23, 2020