Transparent high-resistivity layer for electrostatic friction modulation over a capacitive input sensor
A transparent high-conductivity layer for providing electrostatic feedback to a user of an electronic device. The transparent high-conductivity layer is positioned over a capacitive input sensor and has a resistivity sufficiently high to prevent interference with the capacitive input sensor. As one example, the transparent high-conductivity layer can be formed from a layer of geometrically-separated regions of high-conductivity material. The average distance between geometrically-separated regions can substantially define the resistivity of the transparent high-conductivity layer.
1. An electronic device comprising:
an antireflective coating defining an interface surface configured to receive a user input;
a high-resistivity layer below the antireflective coating;
a dielectric layer below the high-resistivity layer; and
a ground-shifted capacitive input sensor positioned below the dielectric layer and configured to capacitively couple to the high-resistivity layer to drive the high-resistivity layer to high voltage relative to a system ground to modulate friction between the interface surface and the user input.
2. The electronic device of claim 1 , wherein the high-resistivity layer comprises a body formed from a high-resistivity material doped to a selected doping concentration with a high-conductivity material.
3. The electronic device of claim 2 , wherein the selected doping concentration defines:
a first band of a first dopant concentration; and
a second band of a second dopant concentration different from the first dopant concentration.
4. The electronic device of claim 3 , wherein the first band is separated from the second band by an un-doped region of the body.
5. The electronic device of claim 3 , wherein the first band is adjacent to the second band.
6. The electronic device of claim 2 , wherein the selected doping concentration defines a dopant concentration gradient through a thickness of the high-resistivity layer.
7. The electronic device of claim 6 , wherein the dopant concentration gradient exhibits a higher dopant concentration adjacent the antireflective coating and a lower dopant concentration adjacent to the dielectric layer.
8. The electronic device of claim 1 , wherein the high-resistivity layer comprises a body formed from a plurality of sublayers of alternating high and low relative conductivity.
9. The electronic device of claim 1 , wherein the high-resistivity layer is substantially transparent.
10. An electronic device comprising:
a cover layer to receive a user input;
a high-resistivity layer below the cover layer and comprising a number of physically separated regions of high-conductivity material; and
a ground-shifted input sensor configured to capacitively drive the high-resistivity layer to a high voltage relative to a system ground, the ground-shifted input sensor configured positioned below the high-resistivity layer and configured to detect, through the high-resistivity layer, a change in capacitance due to the user input.
11. The electronic device of claim 10 , further comprising a display positioned below the ground-shifted input sensor.
12. The electronic device of claim 11 , wherein the display is configured to emit light through the ground-shifted input sensor, the high-resistivity layer, and the cover layer.
13. The electronic device of claim 10 , wherein the input sensor is a capacitive touch sensor configured to detect a location of a user input relative to a surface area of the cover layer.
14. The electronic device of claim 10 , wherein the cover layer is formed from glass.
15. The electronic device of claim 10 , wherein the number of regions of high-conductivity material are separated by low-conductivity material.
16. A method comprising:
disposing a dielectric layer onto an outer surface of a planar capacitive input sensor;
disposing a layer of high-resistivity material onto the dielectric layer, the layer of high-resistivity material comprising:
a first region doped with a high-conductivity material to a first doping concentration; and
a second region doped with a high-conductivity material to a second doping concentration different from the first doping concentration; and
disposing an antireflective coating over the layer of high-resistivity material.
17. The method of claim 16 , wherein the first region is separated from the second region by an un-doped region of the high-resistivity material.
18. The method of claim 16 , further comprising disposing an antireflective coating layer over the layer of high-resistivity material.
19. The method of claim 16 , further comprising disposing a passivation layer over the layer of high-resistivity material.
20. The method of claim 16 , further comprising, prior to disposing the layer of high-resistivity material, preparing the dielectric layer to bond to the layer of high-resistivity material.