Adjusting scan event thresholds to mitigate memory errors
Systems and methods are disclosed, comprising a memory device comprising multiple groups of memory cells, the groups comprising a first group of memory cells and a second group of memory cells configured to store information at a same bit capacity per memory cell, and a processing device operably coupled to the memory device, the processing device configured to adjust a scan event threshold for one of the first or second groups of memory cells to a threshold less than a target scan event threshold for the first and second groups of memory cells to distribute scan events in time on the memory device.
1. A system comprising:
a memory device comprising a plurality of groups of memory cells, the plurality of groups comprising a first group of memory cells and a second group of memory cells, the first group of memory cells being separate from the second group of memory cells; and
a processing device operably coupled to the memory device, the processing device configured to perform operations comprising:
adjusting a first event threshold for the first group of the memory cells, to a value less than a target event threshold for the first and second groups of memory cells, to distribute fold events triggered on the memory device over time, the first event threshold comprising a first read count value for triggering a first fold event for the first group of the memory cells, and the adjusted first event threshold being different from a second event threshold for the second group of memory cells.
2. The system of claim 1 , wherein the first fold event comprises writing data from the first group of memory cells to another group of memory cells of the memory device.
3. The system of claim 1 , wherein the first and second groups of memory cells are configured to store information at a same bit capacity per memory cell, wherein the same bit capacity per memory cell for the first and second groups of memory cells is a selectable one of a plurality of levels, and wherein the first group of memory cells comprises a block of memory cells, each block comprising a plurality of pages that each comprise a plurality of memory cells.
4. The system of claim 1 , wherein the first event threshold for the first group of memory cells comprises a time after reaching a preliminary condition, and wherein the preliminary condition comprises a read count threshold or sub-threshold for the first group of memory cells less than the target event threshold.
5. The system of claim 1 , wherein the adjusting the first event threshold for the first group of the memory cells comprises:
assigning the first event threshold within a range of event thresholds less than or equal to the target event threshold for the first and second groups of memory cells.
6. The system of claim 1 , wherein the adjusting the first event threshold for the first group of the memory cells comprises:
staggering the first event threshold with respect to the second event threshold.
7. The system of claim 1 , wherein the adjusting the first event threshold for the first group of the memory cells comprises:
increasing the first read count value for the first group of memory cells by a first amount.
8. The system of claim 1 , wherein the adjusting the first event threshold for the first group of the memory cells comprises:
scheduling, based on the adjusted first event threshold, fold events for the first group of the memory cells and the second group of memory cells at different times after reaching an event sub-threshold, lower than an event upper threshold.
9. The system of claim 1 , wherein the operations further comprise:
performing the first fold event for the first group of the memory cells at the adjusted first event threshold.
10. A method comprising:
adjusting, by a processing device, a first event threshold for a first group of memory cells of a memory device, to a value less than a target event threshold for the first group of memory cells and a second groups of memory cells of the memory device, to distribute fold events triggered on the memory device over time, the first event threshold comprising a first read count value for triggering a first fold event for the first group of the memory cells, and the adjusted first event threshold being different from a second event threshold for the second group of memory cells.
11. The method of claim 10 , wherein the first and second groups of memory cells are configured to store information at a same bit capacity per memory cell, wherein the same bit capacity per memory cell for the first and second groups of memory cells is a selectable one of a plurality of levels, and wherein the group of memory cells comprises a block of memory cells, each block comprising multiple pages of memory cells.
12. The method of claim 10 , wherein the first fold event comprises writing data from the first group of memory cells to another group of memory cells of the memory device.
13. The method of claim 10 , wherein the first event threshold for the first, group of memory cells comprises a time after reaching a preliminary condition, and wherein the preliminary condition comprises a read count threshold or sub-threshold for the first group of memory cells less than the target event threshold.
14. The method of claim 10 , wherein the first event threshold for the first group of memory cells comprises a time after reaching a preliminary condition, and wherein the preliminary condition comprises a read count threshold or sub-threshold for the first group of memory cells less than the target event threshold.
15. The method of claim 10 , wherein the adjusting the first event threshold for the first group of the memory cells comprises:
assigning the first event threshold within a range of event thresholds less than or equal to the target event threshold for the first and second groups of memory cells.
16. The method of claim 10 , herein the adjusting the first event threshold for the first group of the memory cells comprises:
staggering the first event threshold with respect to the second event threshold for the second group of memory cells.
17. The method of claim 10 , wherein the adjusting the first event threshold for the first group of memory cells comprises:
increasing the first read count value for the first group of memory cells by a first amount.
18. The method of claim 10 , wherein adjusting the first event threshold for the first group of memory cells comprises:
scheduling, based on the adjusted first event threshold, fold events for the first group of the memory cells and the second group of memory cells at different times after reaching an event sub-threshold, lower than an event upper threshold.
19. The method of claim 10 , comprising:
performing the first fold event for the first group of the memory cells at the adjusted first event threshold.
20. At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
adjusting a first event threshold for a first group of memory cells of a memory device, to a value less than a target event threshold for the first group of memory cells and a second groups of memory cells of the memory device, to distribute fold events triggered on the memory device over time, the first event threshold comprising a first read count value for triggering a first fold event for the first group of the memory cells, and the adjusted first event threshold being different from a second event threshold for the second group of memory cells.