Sense amplifier schemes for accessing memory cells
A sense component of a memory device in accordance with the present disclosure may selectively employ components having a relatively high voltage isolation characteristic in a portion of the sense component associated with relatively higher voltage signals (e.g., signals associated with accessing a ferroelectric random access memory (FeRAM) cell), and components having a relatively low voltage isolation characteristic in a portion of the sense component associated with relatively lower voltage signals (e.g., input/output signals according to some memory architectures). Voltage isolation characteristics may include isolation voltage, activation threshold voltage, a degree of electrical insulation, and others, and may refer to such characteristics as a nominal value or a threshold value. In some examples the sense component may include transistors, and the voltage isolation characteristics may be based at least in part on gate insulation thickness of the transistors in each portion of the sense component.
1. A method, comprising:
generating a first sense signal for a first portion of a sense component based at least in part on accessing a memory cell, the first sense signal having a first voltage;
generating a second sense signal for a second portion of the sense component based at least in part on applying the first sense signal to a channel of a transistor between the first portion and the second portion, wherein the second sense signal is generated with a second voltage, less than the first voltage, that is equal to a difference between a voltage level of a voltage source coupled with a gate of the transistor and an activation threshold voltage of the transistor; and
determining a logic state stored by the memory cell based at least in part on the second voltage of the second sense signal.
2. The method of claim 1 , wherein generating the first sense signal comprises:
coupling a first voltage source with a cross-coupled pair of transistors of the first portion of the sense component.
3. The method of claim 1 , wherein generating the second sense signal comprises:
deactivating the transistor between the first portion and the second portion based at least in part on a difference between the second voltage and the voltage level of the voltage source that is coupled with the gate of the transistor.
4. The method of claim 1 , wherein generating the second sense signal comprises:
coupling a second voltage source with a cross-coupled pair of transistors of the second portion of the sense component.
5. The method of claim 1 , further comprising:
generating a reference signal for the second portion of the sense component;
wherein determining the logic state stored by the memory cell is based at least in part on the reference signal.
6. The method of claim 1 , further comprising:
generating a refresh signal based at least in part on the first sense signal, the refresh signal having a third voltage that is greater than the second voltage.
7. The method of claim 6 , wherein the refresh signal is not applied to the second portion of the sense component.
8. The method of claim 6 , wherein the third voltage is equal to the first voltage.
9. The method of claim 1 , wherein the memory cell comprises a ferroelectric capacitor.
10. The method of claim 1 , wherein:
the first portion of the sense component comprises one or more components having a first degree of insulation associated with the first voltage that is greater than the voltage level of the voltage source; and
the second portion of the sense component comprises one or more components having the second degree of insulation associated with the second voltage that is less than the voltage level of the voltage source.
11. An apparatus, comprising:
a memory cell;
a sense component coupled with the memory cell; and
a controller coupled with the sense component and operable to cause the apparatus to:
generate a first sense signal for a first portion of the sense component based at least in part on accessing the memory cell, the first sense signal having a first voltage;
generate a second sense signal for a second portion of the sense component based at least in part on applying the first sense signal to a channel of a transistor between the first portion and the second portion, wherein the second sense signal is generated with a second voltage, less than the first voltage, that is equal to a difference between a voltage level of a voltage source coupled with a gate of the transistor and an activation threshold voltage of the transistor; and
determine a logic state stored by the memory cell based at least in part on the second voltage of the second sense signal.
12. The apparatus of claim 11 , wherein the first portion of the sense component comprises a cross-coupled pair of transistors, and, to generate the first sense signal, the controller is operable to cause the apparatus to:
couple a second voltage source with the cross-coupled pair of transistors.
13. The apparatus of claim 11 , wherein, to generate the second sense signal, the
transistor between the first portion and the second portion is configured to deactivate based at least in part on a difference between the second voltage and the voltage level of the voltage source that is coupled with the gate of the transistor.
14. The apparatus of claim 11 , wherein the second portion of the sense component comprises a second cross-coupled pair of transistors, and, to generate the second sense signal, the controller is operable to cause the apparatus to:
couple a second voltage source with the second cross-coupled pair of transistors.
15. The apparatus of claim 11 , further comprising:
a reference voltage source, wherein the controller is operable to cause the apparatus to:
couple the reference voltage source with the second portion of the sense component wherein determining the logic state is based at least in part on the coupling.
16. The apparatus of claim 11 , wherein the controller is operable to cause the apparatus to:
generate a refresh signal based at least in part on the first sense signal, the refresh signal having a third voltage that is greater than the second voltage.
17. The apparatus of claim 16 , wherein the sense component is configured to isolate the second portion of the sense component from the third voltage.
18. The apparatus of claim 16 , wherein the third voltage is equal to the first voltage.
19. The apparatus of claim 11 , wherein the memory cell comprises a ferroelectric capacitor.
20. The apparatus of claim 11 , wherein:
the first portion of the sense component comprises one or more components having a first degree of insulation associated with the first voltage that is greater than the voltage level of the voltage source; and
the second portion of the sense component comprises one or more components having a second degree of insulation associated with the second voltage that is less than the voltage level of the voltage source.