Semiconductor device
When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10 13 atoms/cm 2 or lower.
1. A semiconductor device comprising:
a substrate;
a gate electrode layer over the substrate;
an oxide semiconductor film comprising a channel formation region; and
a gate insulating film between the gate electrode layer and the oxide semiconductor film,
wherein a concentration of chlorine on a top surface of the gate electrode layer is 5×10 18 atoms/cm 3 or lower.
2. The semiconductor device according to claim 1 , wherein the concentration of chlorine is 1×10 18 atoms/cm 3 or lower.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film is located over the gate electrode layer.
4. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises indium, gallium and zinc.
5. A semiconductor device comprising:
a substrate;
a gate electrode layer over the substrate;
an oxide semiconductor film comprising a channel formation region; and
a gate insulating film between the gate electrode layer and the oxide semiconductor film,
wherein a concentration of fluorine on a top surface of the gate electrode layer is 5×10 18 atoms/cm 3 or lower.
6. The semiconductor device according to claim 5 , wherein the concentration of fluorine is 1×10 18 atoms/cm 3 or lower.
7. The semiconductor device according to claim 5 , wherein the oxide semiconductor film is located over the gate electrode layer.
8. The semiconductor device according to claim 5 , wherein the oxide semiconductor film comprises indium, gallium and zinc.
9. A semiconductor device comprising:
a substrate;
a gate electrode layer over the substrate;
an oxide semiconductor film comprising a channel formation region; and
a gate insulating film between the gate electrode layer and the oxide semiconductor film,
wherein a concentration of chlorine on a top surface of the gate electrode layer is 5×10 18 atoms/cm 3 or lower, and
wherein the gate electrode layer comprises copper.
10. The semiconductor device according to claim 9 , wherein the substrate is a glass substrate.
11. The semiconductor device according to claim 9 , wherein the substrate is a flexible substrate.
12. The semiconductor device according to claim 9 , wherein the oxide semiconductor film comprises indium, gallium and zinc.
13. A semiconductor device comprising:
a substrate;
a gate electrode layer over the substrate;
an oxide semiconductor film comprising a channel formation region; and
a gate insulating film between the gate electrode layer and the oxide semiconductor film,
wherein a concentration of chlorine on a top surface of the gate electrode layer is 1×10 18 atoms/cm 3 or lower,
wherein the gate electrode layer comprises copper, and
wherein the oxide semiconductor film comprises indium, gallium and zinc.
14. The semiconductor device according to claim 13 , wherein the substrate is a glass substrate.
15. The semiconductor device according to claim 13 , wherein the substrate is a flexible substrate.