Phase change memory using multiple phase change layers and multiple heat conductors
A method is presented for reducing a reset current for a phase change memory (PCM). The method includes forming a bottom electrode, constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, and forming a top electrode over the PCM cell structure. The plurality of phase change memory layers are arranged perpendicular to the top and bottom electrodes. Additionally, airgaps are defined adjacent the PCM cell structure.
1. A method for reducing a reset current for a phase change memory (PCM), the method comprising:
forming a bottom electrode;
constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, wherein only the plurality of heat transfer layers directly contact a top surface of the bottom electrode, wherein a first heat transfer layer of the plurality of heat transfer layers is in direct contact with a second heat transfer layer of the plurality of heat transfer layers and on of the plurality of phase change memory layers is arranged between the first and second heat transfer layers; and
forming a top electrode over the PCM cell structure.
2. The method of claim 1 , wherein the plurality of phase change memory layers each include a Ge—Sb—Te (germanium-antimony-tellurium or “GST”) alloy.
3. The method of claim 1 , wherein the plurality of phase change memory layers are arranged such that their entire length is perpendicular to the top and bottom electrodes.
4. The method of claim 1 , wherein airgaps are defined adjacent the PCM cell structure.
5. The method of claim 4 , wherein the airgaps extend from the top electrode to the bottom electrode.
6. The method of claim 1 , wherein the PCM cell structure defines a U-shaped configuration.
7. The method of claim 6 , wherein an oxide material is disposed within the U-shaped configuration.
8. The method of claim 7 , wherein a pair of phase change memory layers are formed on one side of the oxide material and another pair of phase change memory layers are formed on an opposed side of the oxide material.
9. The method of claim 1 , wherein the plurality of phase change memory layers have different lengths.