Wireless Josephson bifurcation amplifier
A wireless Josephson-junction-based amplifier is described that provides improved tunability and increased control over both a quality factor Q and participation ratio p of the amplifier. The device may be fabricated on a chip and mounted in a waveguide. No wire bonding between the amplifier and coaxial cables or a printed circuit board is needed. At least one antenna on the chip may be used to couple energy between the waveguide and wireless JBA. The amplifier is capable of gains greater than 25 dB.
1. A wireless amplifier comprising:
at least one Josephson junction fabricated on a substrate;
at least one radio-frequency dipole antenna fabricated on the substrate and connected to the at least one Josephson junction;
a split capacitor connected in parallel with the at least one Josephson junction;
a microwave waveguide, wherein the substrate is mounted within the microwave waveguide.
2. The wireless amplifier of claim 1 , wherein a length of the at least one radio-frequency dipole antenna is between about 1 mm and about 5 mm.
3. The wireless amplifier of claim 1 , wherein the at least one Josephson junction is formed on the substrate as a superconducting quantum interference device.
4. The wireless amplifier of claim 3 , wherein the at least one radio-frequency dipole antenna is configured to apply a signal differentially across the superconducting quantum interference device.
5. The wireless amplifier of claim 1 , wherein the split capacitor comprises a pair of parallel-plate capacitors formed on the substrate.
6. The wireless amplifier of claim 1 , wherein the wireless amplifier has a Qp product comprising a resonator Q and inductance participation ratio p, wherein the Qp product is between about 5 and about 10.
7. The wireless amplifier of claim 1 , wherein at least a portion of the split capacitor and a portion of the at least one Josephson junction are formed from a same layer of conductive material.
8. The wireless amplifier of claim 7 , wherein the at least one radio-frequency dipole antenna comprises a portion of the same layer of conductive material.
9. The wireless amplifier of claim 1 , wherein the at least one radio-frequency dipole antenna is connected in series with the at least one Josephson junction.
10. The wireless amplifier of claim 1 , wherein the at least one radio-frequency dipole antenna is located a distance d from a terminating end of the microwave waveguide, wherein nλ g /2<d<(n+1)λ g /2 where n is an integer and λ g represents a fundamental wavelength supported by the microwave waveguide.
11. The wireless amplifier of claim 1 , further comprising:
a signal port connected to the microwave waveguide for applying a signal to be amplified; and
a pump port connected to the microwave waveguide for applying two pump signals.
12. A wireless amplifier comprising:
at least one resonator comprising at least one Josephson junction;
at least one radio-frequency antenna connected to the at least one Josephson junction;
a split capacitor connected in parallel with the at least one Josephson junction; and
a microwave waveguide coupled to the at least one resonator.
13. The wireless amplifier of claim 12 , wherein the at least one Josephson junction is formed on a substrate as a superconducting quantum interference device.
14. The wireless amplifier of claim 12 , wherein the at least one radio-frequency antenna comprises at least one dipole antenna formed on a substrate.
15. The wireless amplifier of claim 14 , wherein a length of the at least one dipole antenna is between about 1 mm and about 5 mm.
16. The wireless amplifier of claim 13 , wherein the at least one radio-frequency antenna is configured to apply a signal differentially across the superconducting quantum interference device.
17. The wireless amplifier of claim 12 , wherein the split capacitor comprises a pair of parallel-plate capacitors formed on a substrate.
18. The wireless amplifier of claim 12 , wherein the wireless amplifier has a Qp product comprising a resonator Q and inductance participation ratio p, wherein the Qp product is between about 5 and about 10.
19. The wireless amplifier of claim 12 , wherein at least a portion of the split capacitor and a portion of the at least one Josephson junction are formed from a same layer of conductive material.
20. The wireless amplifier of claim 19 , wherein the at least one radio-frequency antenna comprises a portion of the same layer of conductive material.
21. The wireless amplifier of claim 12 , wherein the at least one radio-frequency antenna is connected in series with the at least one Josephson junction.
22. The wireless amplifier of claim 12 , wherein the at least one radio-frequency antenna is located a distance d from a terminating end of the microwave waveguide, wherein nλ g /2<d<(n+1)λ g /2 where n is an integer and λ g represents a fundamental wavelength supported by the microwave waveguide.
23. The wireless amplifier of claim 12 , further comprising: a signal port connected to the microwave waveguide for applying a signal to be amplified; and a pump port connected to the microwave waveguide for applying two pump signals.
24. A method for fabricating a wireless amplifier, the method comprising:
forming at least one resonator comprising a Josephson junction on a substrate;
forming at least one radio-frequency dipole antenna on the substrate such that the at least one radio-frequency dipole antenna is connected to the Josephson junction;
forming at least one capacitor connected in parallel with the Josephson junction; and
mounting the substrate within a microwave waveguide.
25. The method of claim 24 , wherein forming the at least one resonator comprises depositing a conductive layer on an insulator on the substrate to form a portion of the Josephson junction.
26. The method of claim 25 , wherein depositing the conductive layer forms at least a portion of the at least one radio-frequency dipole antenna.
27. The method of claim 25 , wherein forming the at least one resonator comprises forming a superconducting quantum interference device.
28. The method of claim 24 , wherein forming the at least one capacitor connected in parallel with the Josephson junction comprises forming a split capacitor.
29. The method of claim 25 , wherein depositing the conductive layer forms at least a portion of the at least one capacitor.