Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy

1. A method for monitoring and controlling a waterless dry cleaning process performed during processing of a lot of production substrates in a plasma processing system, the method comprising:

processing a first production substrate of the lot in a plasma processing chamber of the plasma processing system;

acquiring in-situ monitoring data during the processing of the first production substrate;

after removing the first production substrate from the plasma processing chamber, flowing a dry cleaning gas into the plasma processing chamber of the plasma processing system;

igniting a plasma in the plasma processing chamber to initiate a first instance of the waferless dry cleaning process;

processing a second production substrate of the lot in the plasma processing chamber of the plasma processing system;

acquiring in-situ monitoring data during the processing of the second production substrate;

after removing the second production substrate from the plasma processing chamber, flowing the dry cleaning gas into the plasma processing chamber of the plasma processing system;

igniting a plasma in the plasma processing chamber to initiate a second instance of the waterless dry cleaning process;

adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data acquired during processing of at least one of the first and second production waters to provide a consistent cleanliness level of the plasma processing chamber during processing of the lot of production substrates.

2. The method of claim 1 , wherein the plasma processing system is a plasma etching system.

3. The method of claim 1 , wherein the plasma processing system is a plasma deposition system.

4. The method of claim 1 , wherein said adjusting comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data acquired during processing of the first and second production wafers.

5. The method of claim 1 , wherein the acquiring in-situ monitoring data comprises acquiring optical emission spectroscopy data.

6. The method of claim 1 , wherein the at least one parameter of the waterless dry cleaning process is selected from the group consisting of:

radio frequency (RF) or microwave power supplied to the plasma processing chamber;

RF or microwave power pulse frequency;

RF or microwave pulse duty cycle;

RE power supplied to a substrate holder in the plasma processing chamber;

magnetic field of one of more magnets proximate the substrate holder;

direct current (DC) bias of the substrate holder;

DC bias voltage supplied to at least one electrode arranged proximate the substrate holder;

dry cleaning gas flow rate; and

dry cleaning gas pressure.

7. The method of claim 1 , wherein the adjusting further comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data to maximize the time between wet cleans of the plasma processing chamber.

8. The method of claim 1 , wherein the adjusting further comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data to maximize the lifetime of a component of the plasma processing chamber.

9. The method of claim 1 , wherein the adjusting further comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data to minimize particle generation in the plasma processing chamber.

10. The method of claim 1 , wherein the adjusting further comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the in-situ monitoring data to maximize wafer-to-wafer critical dimension (CD) uniformity in the lot of production substrates.

11. The method of claim 1 , wherein the dr cleaning gas comprises oxygen, an oxygen-containing gas, HCl, F2, Cl2, hydrogen, nitrogen, argon, SF6, C2F6, NF3, CF4, or a mixture of two or more thereof.

12. The method of claim 1 , further comprising acquiring optical emission spectroscopy data during the second instance of the waferless dry cleaning process.

13. The method of claim 12 , further comprising terminating the second instance of the waterless dry cleaning process when the acquired optical emission spectra substantially match a target optical emission spectrum,

wherein the target optical emission spectrum is characteristic for a plasma processing chamber for a predetermined acceptable clean condition.

14. The method of claim 12 , further comprising:

terminating the second instance of the waterless dry cleaning process when content of a residual constituent approaches a determined level based on OES endpoint analysis.

15. The method of claim 1 , further comprising acquiring, during at least one of the first and second instances of the waterless dry cleaning process, optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber.

16. The method of claim 15 , wherein said adjusting further comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the optical emission spectra acquired during at least one of the first and second instances of the waterless dry cleaning process.

17. The method of claim 16 , wherein said adjusting comprises adjusting at least one parameter of the second instance of the waterless dry cleaning process based on the optical emission spectra acquired during the first and second instances of the waterless dry cleaning process.

18. The method of claim 1 , further comprising:

processing a plurality of additional production substrates of the lot in the plasma processing chamber of the plasma processing system;

acquiring in-situ monitoring data during the processing of the plurality of additional production substrates;

igniting a plasma in the plasma processing chamber to initiate an additional instance of the waterless dry cleaning process; and

adjusting at least one parameter of the additional instance of the waterless dry cleaning process based on the in-situ monitoring data acquired during processing of the plurality of additional wafers.

19. The method of claim 18 , wherein the adjusting of at least one parameter of the additional instance of the waterless dry cleaning process comprises performing the additional instance of the waterless dry cleaning process at different process parameters than the first and second instances of the waterless dry cleaning process.

20. The method of claim 19 , wherein the first, second, and additional instances of the waterless dry cleaning process are performed at different processing parameters from one another.