Light irradiation type heat treatment method and heat treatment apparatus
Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.
1. A method of heating a substrate by irradiating the substrate with a flash of light, said method comprising the steps of:
(a) measuring a reflectance of a substrate to be treated;
(b) calculating a theoretical reflectance of said substrate from said measured reflectance obtained in said step (a);
(c) specifying the type and thickness of a thin film formed on a surface of said substrate, based on the theoretical reflectance calculated in said step (b); and
(d) determining a correlation coefficient between a measured reflectance of a reference substrate with a theoretical reflectance previously known and the theoretical reflectance,
wherein the theoretical reflectance of said substrate is calculated in said step (b), based on the measured reflectance obtained in said step (a) and said correlation coefficient
(e) Heating the substrate by irradiating the substrate with a flash of light based on the type of thickness of the thin film specified in step (c).
2. The method according to claim 1 , further comprising the step of
(f) determining treatment conditions for said substrate, based on the type and thickness specified in said step (c).
3. A method of heating a substrate by irradiating the substrate with a flash of light, said method comprising the steps of:
(a) measuring a reflectance of a substrate to be treated;
(b) calculating a theoretical reflectance of said substrate from said measured reflectance obtained in said step (a);
(c) specifying the type and thickness of a thin film formed on a surface of said substrate, based on the theoretical reflectance calculated in said step (b); and
(e) creating a database in which multiple theoretical reflectances obtained by calculating theoretical reflectances of a substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses,
wherein pattern matching for the theoretical reflectance calculated in said step (b) is performed on said database to specify the type and thickness of the thin film formed on the surface of said substrate in said step (c)
(f) Heating the substrate by irradiating the substrate with a flash of light based on the type of thickness of the thin film specified in step (c).
4. The method according to claim 3 , wherein
a thin film having properties corresponding to the type and thickness specified in said step (c) is regarded as being formed on the surface of said substrate that is patterned.
5. The method according to claim 3 , further comprising the step of (g) determining treatment conditions for said substrate, based on the type and thickness specified in said step (c).