Wafer bonding method and apparatus with curved surfaces
An apparatus for and a method of bonding a first substrate and a second substrate are provided. In an embodiment a first wafer chuck has a first curved surface and a second wafer chuck has a second curved surface. A first wafer is placed on the first wafer chuck and a second wafer is placed on a second wafer chuck, such that both the first wafer and the second wafer are pre-warped prior to bonding. Once the first wafer and the second wafer have been pre-warped, the first wafer and the second wafer are bonded together.
1. A method of bonding wafers, the method comprising:
placing a first wafer in physical contact with a first surface, the first surface being glass;
initiating a first vacuum pump and suctioning the first wafer onto the first surface, the first surface having a first curvature;
placing a second wafer in physical contact with a second surface;
initiating a second vacuum pump to suction the second wafer onto the second surface, the second surface having a second curvature, the first surface and the second surface being curved both prior to and after the initiating the first vacuum pump and the initiating the second vacuum pump; and
bonding the first wafer to the second wafer.
2. The method of claim 1 , wherein the bonding the first wafer to the second wafer further comprises placing a first point of the first wafer in physical contact with a second point of the second wafer.
3. The method of claim 2 , wherein the bonding the first wafer to the second wafer further comprising turning off the first vacuum pump after the placing the first point of the first wafer in physical contact with the second point of the second wafer.
4. The method of claim 1 , further comprising modifying a first temperature of the first wafer using a first temperature controller.
5. The method of claim 4 , further comprising modifying a second temperature of the second wafer using a second temperature controller.
6. The method of claim 1 , wherein the first surface has a deformation of about 3 μm from a center of the first surface to an edge of the first surface.
7. A method of bonding wafers, the method comprising:
placing a first wafer with a plurality of dies in physical contact with a first curved surface of silicon oxide, silicon nitride, glass, or aluminum oxide;
placing a second wafer in physical contact with a second curved surface of the first curved surface having a smaller curvature than the second curved surface;
initiating a first vacuum, wherein both the first curved surface and the second curved surface are curved both prior to and after the initiating the first vacuum, the first wafer being a first semiconductor wafer;
measuring an alignment between the first wafer and the second wafer, wherein the measuring the alignment is performed while the first wafer is warped on the first curved surface and while the second wafer is warped on the second curved surface; and
placing the first wafer and the second wafer into contact with each other.
8. The method of claim 7 , wherein the first curved surface has a deformation of about 3 μm from a center of the first curved surface to an edge of the first curved surface.
9. The method of claim 7 , further comprising suctioning the first wafer to the first curved surface.
10. The method of claim 9 , further comprising suctioning the second wafer to the second curved surface.
11. The method of claim 7 , further comprising modifying a first temperature of the first curved surface using a first temperature controller.
12. The method of claim 11 , wherein the first temperature controller comprises a thermal plate.
13. A method of bonding wafers, the method comprising:
initiating a first vacuum to adhere a first semiconductor wafer to a first curved surface of a first wafer chuck, the first curved surface being curved both prior to and after the initiating the first vacuum, the first curved surface comprising silicon oxide, the first semiconductor wafer in physical contact with the first curved surface;
initiating a second vacuum to adhere a second semiconductor wafer to a second curved surface of a second wafer chuck, the second curved surface being curved both prior to and after the initiating the second vacuum; and
moving the first wafer chuck relative to the second wafer chuck to contact the first semiconductor wafer to the second semiconductor wafer.
14. The method of claim 13 , further comprising modifying a first temperature of the first semiconductor wafer using a first temperature controller.
15. The method of claim 14 , wherein the first temperature controller comprises a thermal plate.
16. The method of claim 13 , wherein the first wafer chuck has a first length of between about 250 mm and about 300 mm.
17. The method of claim 13 , further comprising aligning the first semiconductor wafer to the second semiconductor wafer.
18. The method of claim 17 , wherein the aligning the first semiconductor wafer to the second semiconductor wafer comprising directing infrared energy towards the first semiconductor wafer.
19. The method of claim 13 , wherein the first curved surface has a deformation of about 3 μm from a center of the first curved surface to an edge of the first curved surface.
20. The method of claim 13 , wherein the moving the first wafer chuck places a first point of the first semiconductor wafer in physical contact with a second point of the second semiconductor wafer.