Radical-activated etching of metal oxides
The present disclosure describes methods and systems for radical-activated etching of a metal oxide. The system includes a chamber, a wafer holder configured to hold a wafer with a metal oxide disposed thereon, a first gas line fluidly connected to the chamber and configured to deliver a gas to the chamber, a plasma generator configured to generate a plasma from the gas, a grid system between the plasma generator and the wafer holder and configured to increase a kinetic energy of ions from the plasma, a neutralizer between the grid system and the wafer holder and configured to generate electrons and neutralize the ions to generate radicals, and a second gas line fluidly connected to the chamber and configured to deliver a precursor across the wafer. The radicals facilitate etching of the metal oxide by the precursor.
1. A system, comprising:
a chamber;
a wafer holder, in the chamber, configured to hold a wafer with a metal oxide disposed thereon;
a plasma generator configured to generate a plasma from a gas;
a grid system, between the plasma generator and the wafer holder, configured to increase a kinetic energy of ions from the plasma;
a neutralizer, below the grid system, configured to generate electrons to neutralize the ions into radicals; and
a vaporizer, below the neutralizer, connected to a sidewall of the chamber adjacent to the neutralizer and the wafer holder and configured to vaporize a precursor over the wafer.
2. The system of claim 1 , wherein the grid system comprises a screen grid configured to separate the ions from the plasma.
3. The system of claim 1 , wherein the grid system comprises an accelerator grid configured to accelerate the ions from the plasma.
4. The system of claim 1 , wherein the grid system comprises a decelerator grid configured to block the electrons from the grid system.
5. The system of claim 1 , further comprising a heating system configured to heat the wafer.
6. The system of claim 1 , further comprising a gas distribution plate, above the grid system, configured to distribute the gas uniformly across the chamber.
7. The system of claim 1 , wherein the gas comprises fluorine to facilitate the radicals to fluorinate a surface of the metal oxide.
8. The system of claim 1 , wherein the gas comprises an inert gas to facilitate the radicals in a ligand exchange reaction on a surface of the metal oxide.
9. The system of claim 1 , wherein the gas comprises hydrogen to facilitate the radicals to clean a surface of the metal oxide.
10. The system of claim 1 , wherein the metal oxide comprises hafnium oxide, aluminum oxide, or zirconium oxide.
11. A system, comprising:
a chamber;
a wafer holder, at a bottom portion of the chamber, configured to hold a wafer with a metal oxide disposed thereon;
a first gas line fluidly connected to a top portion of the chamber and configured to deliver a gas to the chamber;
a plasma generator configured to generate a plasma from the gas;
a grid system, between the plasma generator and the wafer holder, configured to increase a kinetic energy of ions from the plasma;
a neutralizer, downstream of the grid system, configured to generate electrons and neutralize the ions into radicals; and
a second gas line, adjacent to the wafer holder, fluidly connected to the chamber and configured to deliver a precursor downstream of the neutralizer, wherein the radicals activate the precursor for the wafer.
12. The system of claim 11 , wherein the grid system comprises:
an accelerator grid configured to accelerate the ions from the plasma;
a screen grid, between the accelerator grid and the plasma generator, configured to separate the ions from the plasma; and
a decelerator grid, between the accelerator grid and the wafer holder, configured to block the electrons.
13. A system, comprising:
a wafer holder, configured to hold and heat a wafer with a metal oxide disposed thereon;
a plasma generator configured to generate a plasma from a gas;
a grid system, between the plasma generator and the wafer holder, configured to increase a kinetic energy of ions from the plasma;
a neutralizer, downstream of the grid system, configured to generate electrons to neutralize the ions into radicals with the electrons; and
a vaporizer, downstream of the neutralizer, configured to vaporize a precursor between the radicals and the wafer.
14. The system of claim 13 , wherein the grid system comprises:
an accelerator grid configured to accelerate the ions from the plasma;
a screen grid, between the accelerator grid and the plasma generator, configured to separate the ions from the plasma; and
a decelerator grid, between the accelerator grid and the wafer holder, configured to block the electrons.
15. The system of claim 14 , wherein the accelerator grid comprises a first aperture having a first diameter and the screen grid comprises a second aperture having a second diameter larger than the first diameter.
16. The system of claim 14 , wherein the accelerator grid comprises a first aperture having a first diameter and the decelerator grid comprises a second aperture having a second diameter larger than the first diameter.
17. The system of claim 6 , wherein the plasma generator is between the gas distribution plate and the grid system.
18. The system of claim 11 , wherein the wafer holder comprises a heater configured to heat the wafer.
19. The system of claim 11 , further comprising a gas distribution plate adjacent to the first gas line and configured to distribute the gas uniformly for the plasma generator.
20. The system of claim 19 , wherein the plasma generator is between the gas distribution plate and the grid system.