Semiconductor device
A semiconductor device may include: an upper conductive plate, a middle conductive plate, and a lower conductive plate which are stacked on each other; a first semiconductor chip located between the upper and middle conductive plates and electrically connected to both the upper and middle; a second semiconductor chip located between the middle and lower conductive plates and electrically connected to both the middle and lower conductive plates; and an encapsulant encapsulating the first and second semiconductor chips and integrally holding the upper, middle and lower conductive plates. The middle conductive plate may include a main portion joined to the first and second semiconductor chips within the encapsulant and an exposed portion exposed outside on a surface of the encapsulant. A thickness of the exposed portion may be equal to or greater than a thickness of the main portion.
1. A semiconductor device comprising:
an upper conductive plate, a middle conductive plate, and a lower conductive plate which are stacked on each other;
a first semiconductor chip located between the upper conductive plate and the middle conductive plate and electrically connected to both the upper conductive plate and the middle conductive plate;
a second semiconductor chip located between the middle conductive plate and the lower conductive plate and electrically connected to both the middle conductive plate and the lower conductive plate; and
an encapsulant encapsulating the first semiconductor chip and the second semiconductor chip and integrally holding the upper conductive plate, the middle conductor plate, and the lower conductive plate,
wherein
the middle conductive plate comprises a main portion joined to the first semiconductor chip and the second semiconductor chip within the encapsulant and an exposed portion exposed outside on a surface of the encapsulant, and
a thickness of the exposed portion of the middle conductive plate is equal to or greater than a thickness of the main portion of the middle conductive plate.
2. The semiconductor device according to claim 1 , wherein
the thickness of the exposed portion of the middle conductive plate is greater than the thickness of the main portion of the middle conductive plate.
3. The semiconductor device according to claim 1 , wherein
the encapsulant comprises an upper surface and a lower surface located opposite the upper surface,
the upper conductive plate is exposed outside the upper surface of the encapsulant, and
the lower conductive plate is exposed outside the lower surface of the encapsulant.
4. The semiconductor device according to claim 3 , wherein
the encapsulant further comprises a side surface extending between the upper surface and the lower surface, and
the exposed portion of the middle conductive plate is exposed outside the side surface of the encapsulant.
5. The semiconductor device according to claim 3 , wherein
the exposed portion of the middle conductive plate is exposed outside at least one of the upper surface and the lower surface of the encapsulant.
6. The semiconductor device according to claim 3 , wherein
the encapsulant further comprises a side surface extending between the upper surface and the lower surface, and
the exposed portion of the middle conductive plate is exposed outside the side surface and further outside at least one of the upper surface and the lower surface of the encapsulant.