FinFET device having flat-top epitaxial features and method of making the same
A semiconductor device and method of forming the same are disclosed. The method of forming a semiconductor device includes providing a substrate, an isolation structure over the substrate, and at least two fins extending from the substrate and through the isolation structure; etching the at least two fins, thereby forming at least two trenches; growing first epitaxial features in the at least two trenches; growing second epitaxial features over the first epitaxial features in a first growth condition; and after the second epitaxial features reach a target critical dimension, growing the second epitaxial features in a second growth condition different from the first growth condition.
1. A method of forming a semiconductor device, comprising:
providing a substrate, an isolation structure over the substrate, and at least two fins extending from the substrate and through the isolation structure, wherein the at least two fins extend lengthwise in a first direction;
etching the at least two fins, thereby forming at least two trenches;
growing first epitaxial features in the at least two trenches;
growing second epitaxial features over the first epitaxial features in a first growth condition, wherein a portion of the second epitaxial features extends into one of the at least two trenches and is sandwiched by a portion of the first epitaxial features that is in the one of the at least two trenches in a cross section perpendicular to the first direction, and wherein the second epitaxial features merge and form a top surface with a dip; and
after the second epitaxial features merge in the first growth condition, growing the second epitaxial features in a second growth condition inside and outside the dip simultaneously with a growth rate inside the dip higher than outside the dip, wherein the second growth condition is different from the first growth condition.
2. The method of claim 1 , wherein the second epitaxial features comprise silicon, the first growth condition uses a first precursor having dichlorosilane (SiH 2 Cl 2 ), and the second growth condition uses the first precursor and a silane.
3. The method of claim 1 , wherein the second epitaxial features comprise silicon germanium, the second growth condition uses less HCl than the first growth condition does.
4. The method of claim 1 , further comprising:
doping the first epitaxial features with a first dopant to a first dopant concentration; and
doping the second epitaxial features with the first dopant to a second dopant concentration that is higher than the first dopant concentration.
5. The method of claim 1 , wherein the second epitaxial features are grown to have a substantially flat top surface, further comprising:
forming a contact over the substantially flat top surface.
6. The method of claim 1 , further comprising:
before the etching of the at least two fins, forming a dielectric layer on portions of sidewalls of the at least two fins, wherein the first epitaxial features are surrounded at least partially by the dielectric layer.
7. The method of claim 1 , further comprising:
forming a contact layer over the second epitaxial features, wherein the contact layer has a non-flat bottom surface and a portion of the non-flat bottom surface is below a top surface of a merged portion of the second epitaxial features.
8. A method of forming a semiconductor device, comprising:
providing a substrate, an isolation structure over the substrate, and two fins extending from the substrate and through the isolation structure;
forming a dielectric layer on portions of sidewalls of the two fins;
etching the two fins, thereby forming two trenches;
growing first epitaxial features in the two trenches;
growing second epitaxial features over the first epitaxial features in a first growth condition, wherein the second epitaxial features merge and form a merged portion, wherein a lower portion of the second epitaxial features extends into the two trenches and sandwiched by the first epitaxial features in each of the two trenches in a cross section perpendicular to a lengthwise direction of the two fins;
switching the growing of the second epitaxial features from the first growth condition to a second growth condition different from the first growth condition once the merged portion reaches a predetermined thickness; and
continuing the growing of the second epitaxial feature in the second growth condition until the merged portion reaches a target thickness, wherein the predetermined thickness is from a quarter to a third of the target thickness.
9. The method of claim 8 , wherein the second epitaxial features comprise silicon, the first growth condition uses a first precursor having dichlorosilane (SiH 2 Cl 2 ), and the second growth condition uses the first precursor and a silane.
10. The method of claim 9 , wherein the silane is SiH 4 .
11. The method of claim 10 , wherein a ratio of SiH 4 to dichlorosilane in the second growth condition ranges from about 0.005 to about 0.05.
12. The method of claim 8 , wherein the second epitaxial features comprise silicon germanium, and wherein each of the first and second growth conditions uses HCl as an etching gas and a gas mixture of GeH 4 and H 2 as a deposition gas.
13. The method of claim 12 , wherein the second growth condition uses less HCl than the first growth condition does.
14. The method of claim 12 , wherein the second growth condition has a HCl flow rate ranging from about 100 to about 400 standard cubic centimeters per minute (sccm).
15. The method of claim 8 , further comprising:
doping the first epitaxial features with a first dopant to a first dopant concentration; and
doping the second epitaxial features with the first dopant to a second dopant concentration that is higher than the first dopant concentration.
16. The method of claim 8 , wherein the second epitaxial features are grown to have a substantially flat top surface, further comprising:
forming a contact over the substantially flat top surface.
17. A method of forming a semiconductor device, comprising:
providing a substrate, an isolation structure over the substrate, and two fins extending from the substrate and through the isolation structure;
etching the two fins, thereby forming first and second trenches;
growing first epitaxial features in the first and second trenches;
doping the first epitaxial features with a first dopant to a first dopant concentration;
growing second epitaxial features over the first epitaxial features; and
doping the second epitaxial features with the first dopant to a second dopant concentration that is higher than the first dopant concentration, wherein the growing of the second epitaxial features includes:
growing a first portion of the second epitaxial features in a first growth condition, and
after the second epitaxial features reach a target critical dimension, growing a second portion of the second epitaxial features in a second growth condition different from the first growth condition, wherein a part of the first portion of the second epitaxial features extends into the first trench and is surrounded by a part of the first epitaxial features that is in the first trench in a cross section perpendicular to a lengthwise direction of the two fins.
18. The method of claim 17 , wherein the second epitaxial features comprise silicon, the first growth condition uses a first precursor having dichlorosilane (SiH 2 Cl 2 ), and the second growth condition uses the first precursor and a silane.
19. The method of claim 17 , further comprising:
before the etching of the two fins, forming a dielectric layer on portions of sidewalls of the two fins, wherein the first epitaxial features are surrounded at least partially by the dielectric layer.
20. The method of claim 17 , wherein the second epitaxial features comprise silicon germanium, wherein each of the first and second growth conditions uses HCl as an etching gas and a gas mixture of GeH 4 and H 2 as a deposition gas.
21. The method of claim 20 , wherein the second growth condition uses less HCl than the first growth condition does.