Spin orbit torque memory devices and methods of fabrication

1. A memory device, comprising:

a spin orbit electrode having an electron current direction, the spin orbit electrode comprising a magnetic material and platinum, wherein the magnetic material is intrinsically ferromagnetic and has an in-plane magnetization along the electron current direction; and

a material layer stack on the spin orbit electrode, the material layer stack comprising:

a first magnet on and in direct contact with the spin orbit electrode, the first magnet comprising a first magnetization, wherein the first magnetization is orthogonal to the in-plane magnetization;

a second magnet with a second magnetization, the second magnet above the first magnet;

a layer between the first magnet and the second magnet; and

an electrode coupled with the second magnet.

2. The memory device of claim 1 , wherein the spin orbit electrode comprises at least 50% platinum.

3. The memory device of claim 1 , wherein the magnetic material comprises at least one of cobalt, or iron.

4. The memory device of claim 1 , wherein the first and the second magnetizations are along a same plane of the memory device.

5. The memory device of claim 1 , wherein the first and the second magnetizations are orthogonal to each other.

6. The memory device of claim 1 , wherein the spin orbit electrode comprises a first surface having a first longitudinal dimension, and the lowermost surface of the first magnet comprises a second surface having a second dimension along the first longitudinal dimension, wherein the first longitudinal dimension is at least three time greater than the second dimension, and wherein the in-plane magnetization is an in-plane magnetization with respect to the first surface and with respect to the second surface and wherein the first magnetization is orthogonal with respect to the second surface.

7. The memory device of claim 6 , wherein the spin orbit electrode further comprises a third dimension orthogonal to the first dimension, and the second surface of the first magnet comprises a fourth dimension along the third dimension, wherein the fourth dimension is substantially the same as the third dimension.

8. The memory device of claim 1 , wherein the spin orbit electrode has a thickness between 3 nm and 12 nm.

9. The memory device of claim 1 , wherein the spin orbit electrode has a first portion under the material layer stack having a first thickness and a second portion laterally adjacent to the first portion having a second thickness, where the first thickness is greater than the second thickness.

10. The memory device of claim 9 , wherein the first thickness is between 1 nm and 3 nm greater than the second thickness.

11. The memory device of claim 1 , wherein the first magnet and second magnet comprise at least one of cobalt, iron or boron.

12. The memory device of claim 1 further comprises a synthetic anti-ferromagnet (SAF) between the second magnet and the electrode, wherein the SAF is anti-ferromagnetically coupled with the second magnet.

13. An apparatus comprising:

a first electrode, comprising:

a magnetic material and platinum, wherein the magnetic material is intrinsically ferromagnetic and has an in-plane magnetization along an electron current direction; and

a material layer stack on at least a portion of the first electrode, the material layer stack comprising:

a first magnet with first magnetization on and indirect contact with the portion of the first electrode, wherein the first magnetization is orthogonal to the in-plane magnetization;

a second magnet with a second magnetization, the second magnet above the first magnet;

a first layer between the first magnet and the second magnet; and

second electrode coupled with the second magnet.

14. The apparatus of claim 13 , wherein the first electrode comprises at least 50% platinum.

15. The apparatus of claim 13 , wherein the first and the second magnetizations are along a same plane of the apparatus, and wherein the first electrode has a thickness between 3 nm and 12 nm.

16. A system comprising:

a processor comprising at least a transistor above a substrate, the transistor comprising:

a drain contact coupled to a drain;

a source contact coupled to a source; and

a gate contact coupled to a gate; and

a perpendicular spin orbit memory device coupled with the drain contact, the perpendicular spin orbit memory device comprising:

a first electrode comprising a magnetic material and platinum, wherein the magnetic material is intrinsically ferromagnetic and has an in-plane magnetization along an electron current direction; and

a material layer stack on the first electrode, the material layer stack comprising:

a first magnet on and in direct contact with the spin orbit electrode, the first magnet comprising a first magnetization, wherein the first magnetization is orthogonal to the in-plane magnetization;

a second magnet with a second magnetization, the second magnet above the first magnet;

a layer between the first magnet and the second magnet;

an electrode coupled with the second magnet; and

a conductive interconnect coupled to the first electrode, wherein the conductive interconnect is laterally distant from the drain contact.

17. The system of claim 16 , further comprises a battery coupled to power the processor comprising the perpendicular spin orbit memory device.