Edge incident type semiconductor light receiving device
In an edge incident type semiconductor light receiving device that reflects light incident parallel to the main surface of the semiconductor substrate opaque to the incident light to the light receiving section on the main surface side, a light guide section is formed to expose the light receiving section along the light incident direction from the light incident side end of the semiconductor substrate, and in order to guide the light incident on the light guide section to the light receiving section, a light reflection section having a given crossing angle with the main surface is provided at the end of the light guide section in the light incident direction.
1. An edge incident type semiconductor light receiving device, which has a light receiving section on a main surface side of a semiconductor substrate and reflects light incident including light parallel to the main surface, to enter the light receiving section; wherein
a light guide section is formed to expose the light receiving section along a light incident direction from a light incident side end of the semiconductor substrate,
in order to guide light incident in the light guide section to the light receiving section, a reflection section having a predetermined intersection angle with the main surface is provided at an end section of the light guide section in the light incident direction,
the semiconductor substrate is a group IV semiconductor substrate that absorbs incident light,
a mount substrate having a mount substrate reflection section facing the light guide section is provided on a back surface side of the semiconductor substrate, and
light reflected by the reflection section is reflected toward the mount substrate reflection section, and the mount substrate reflection section is configured to reflect the light reflected by the reflection section toward the light receiving section.
2. The edge incident type semiconductor light receiving device according to claim 1 ; wherein the reflection section is formed on a (111) surface of the semiconductor substrate.
3. The edge incident type semiconductor light receiving device according to claim 1 ; wherein the light receiving section has an antireflection film on a side facing the light guide section.