Variable resistance memory device
A semiconductor device includes a plurality of first conductive lines disposed on a substrate, a plurality of second conductive lines intersecting the plurality of first conductive lines, and a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines. At least one among the plurality of cell structures includes a first electrode, a switching element disposed on the first electrode, a second electrode disposed on the switching element, a first metal pattern disposed on the second electrode, a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines, and a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode.
1. A semiconductor device comprising:
a plurality of first conductive lines disposed on a substrate;
a plurality of second conductive lines intersecting the plurality of first conductive lines; and
a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines,
wherein at least one among the plurality of cell structures comprises:
a first electrode;
a switching element disposed on the first electrode;
a second electrode disposed on the switching element;
a first metal pattern disposed on the second electrode;
a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines;
a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode, a bottom surface of the first spacer being interposed between a top surface of the second electrode and a bottom surface of the second electrode; and
a second spacer disposed on the first spacer and a sidewall of the switching element.
2. The semiconductor device of claim 1 , wherein the second spacer is further disposed on the sidewall of the second electrode and a top surface of the first electrode.
3. The semiconductor device of claim 1 , wherein the at least one among the plurality of cell structures further comprises a conductive polymer layer disposed on the second spacer, a top surface of the first electrode, a sidewall of the first electrode, and a sidewall of at least one among the plurality of first conductive lines, and
wherein the second spacer separates the second electrode and the switching element from the conductive polymer layer.
4. The semiconductor device of claim 3 , wherein the at least one among the plurality of cell structures further comprises a third spacer disposed on the conductive polymer layer.
5. The semiconductor device of claim 4 , wherein the at least one among the plurality of cell structures further comprises a capping layer disposed on the third spacer.
6. The semiconductor device of claim 3 , wherein the sidewall of the switching element comprises a dent region that is recessed inwardly,
wherein the second spacer conformally covers the dent region, and
wherein the conductive polymer layer extends to the dent region.
7. The semiconductor device of claim 3 , wherein the at least one among the plurality of cell structures further comprises a capping layer disposed on the conductive polymer layer.
8. The semiconductor device of claim 1 , wherein the at least one among the plurality of cell structures further comprises a second metal pattern interposed between the variable resistance pattern and the at least one among the plurality of second conductive lines, and
wherein the first spacer is further disposed on a sidewall of the second metal pattern.
9. The semiconductor device of claim 8 , wherein the variable resistance pattern comprises a recess part that is formed by the sidewall of the variable resistance pattern being recessed inwardly from the sidewall of the first metal pattern and the sidewall of the second metal pattern,
wherein the first spacer comprises:
a first portion filling the recess part of the variable resistance pattern; and
a second portion disposed on the sidewall of the second metal pattern, the sidewall of the first metal pattern and the sidewall of the second electrode, and
wherein a first thickness of the first portion of the first spacer is greater than a second thickness of the second portion of the first spacer.
10. The semiconductor device of claim 1 , wherein a first portion of the plurality of cell structures is disposed adjacent to a center of a cell array area of the substrate,
wherein a second portion of the plurality of cell structures is disposed on an edge of the cell array area, and
wherein the at least one among the plurality of cell structures is disposed on the edge of the cell array area.
11. A semiconductor device comprising:
a plurality of first conductive lines disposed on a substrate;
a plurality of second conductive lines intersecting the plurality of first conductive lines;
a plurality of first cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines, and disposed adjacent to a center of a cell array area of the substrate; and
a plurality of second cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines, and disposed on an edge of the cell array area,
wherein each of the plurality of first cell structures comprises:
a first electrode;
a switching element disposed on the first electrode;
a second electrode disposed on the switching element;
a first metal pattern disposed on the second electrode;
a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines;
a first spacer disposed on a sidewall of the variable resistance pattern and a top surface of the first metal pattern; and
a second spacer disposed on the first spacer and a sidewall of the first metal pattern, and
wherein each of the plurality of first cell structures further comprises a capping layer disposed on the second spacer, a sidewall of the second electrode, a sidewall of the switching element, and a sidewall of the first electrode.
12. A semiconductor device comprising:
a plurality of first conductive lines disposed on a substrate;
a plurality of second conductive lines intersecting the plurality of first conductive lines;
a plurality of first cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines, and disposed adjacent to a center of a cell array area of the substrate; and
a plurality of second cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines, and disposed on an edge of the cell array area,
wherein each of the plurality of first cell structures comprises:
a first electrode;
a switching element disposed on the first electrode;
a second electrode disposed on the switching element;
a first metal pattern disposed on the second electrode;
a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines;
a first spacer disposed on a sidewall of the variable resistance pattern and a top surface of the first metal pattern; and
a second spacer disposed on the first spacer and a sidewall of the first metal pattern, and
wherein the second spacer is further disposed on a top surface of the second electrode.
13. The semiconductor device of claim 11 , wherein each of the plurality of first cell structures further comprises a third spacer disposed on the second spacer, a sidewall of the second electrode, a sidewall of the switching element, a sidewall of the first electrode, and a top surface of at least one among the plurality of first conductive lines.
14. The semiconductor device of claim 13 , wherein each of the plurality of first cell structures further comprises a capping layer disposed on the third spacer and a sidewall of the at least one among the plurality of first conductive lines.
15. The semiconductor device of claim 11 , wherein each of the plurality of first cell structures further comprises a second metal pattern interposed between the variable resistance pattern and the at least one among the plurality of second conductive lines,
wherein the variable resistance pattern comprises a recess part that is formed by the sidewall of the variable resistance pattern being recessed inwardly from the sidewall of the first metal pattern and a sidewall of the second metal pattern,
wherein the first spacer comprises:
a first portion filling the recess part of the variable resistance pattern; and
a second portion disposed on the sidewall of the second metal pattern, the sidewall of the first metal pattern and a sidewall of the second electrode, and
wherein a first thickness of the first portion of the first spacer is greater than a second thickness of the second portion of the first spacer.
16. The semiconductor device of claim 11 , wherein each of the plurality of second cell structures comprises:
the first electrode;
the switching element disposed on the first electrode;
the second electrode disposed on the switching element;
the first metal pattern disposed on the second electrode;
the variable resistance pattern interposed between the first metal pattern and one or more among the plurality of second conductive lines;
the first spacer disposed on the sidewall of the variable resistance pattern, the sidewall of the first metal pattern and a sidewall of the second electrode, a bottom surface of the first spacer being interposed between a top surface of the second electrode and a bottom surface of the second electrode; and
the second spacer disposed on the first spacer and a sidewall of the switching element.