Bipolar transistor
Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.
1. A transistor comprising:
a substrate;
a base comprised of a first dopant type;
a collector between the substrate and the base and comprising:
a first collector region under the base and comprised of the first dopant type having a first doping concentration that is substantially constant;
a second collector region under the first collector region and comprised of a second dopant type that is different from the first dopant type and having a second doping concentration that is substantially constant;
a third collector region under the second collector region and comprised of the second dopant type with a third doping concentration that is a function of increasing distance from the second collector region through the third region; and
an emitter over the base opposite the collector.
2. The transistor of claim 1 , wherein the third doping concentration increases linearly as the function of increasing distance from the second collector region through the third collector region.
3. The transistor of claim 2 , wherein the function is approximated by a plurality of doping steps that follows to within ±5% of continuous linear doping.
4. The transistor of claim 1 , wherein the third doping concentration of the third region increases non-linearly as the function of increasing distance from the second collector region through the third collector region.
5. The transistor of claim 4 , wherein the function is approximated by a plurality of doping steps that follows to within ±5% of continuous non-linear doping.
6. The transistor of claim 4 , wherein the function is selected from one of exponential functions and power functions having exponents other than 1 and 0.
7. The transistor of claim 1 , wherein the first doping concentration of the first collector region is between 1.5E16 cm −3 and 2.5E16 cm −3 .
8. The transistor of claim 1 , wherein the second doping concentration of the second collector region is between about 1.0E16 cm −3 and 2.0E16 cm −3 .
9. The transistor of claim 1 , wherein the third doping concentration of the third collector region increases from a lower value to a higher value as a function of increasing distance from the second collector region through the third collector region, wherein the lower value of doping concentration is between 1.0E16 cm −3 and 2.0E16 cm −3 and the higher value of doping concentration is between 7.5E16 cm −3 and 10.5E16 cm −3 .
10. The transistor of claim 1 , wherein the first collector region has a thickness between 1000 Angstroms and 2000 Angstroms.
11. The transistor of claim 1 , wherein the second collector region has a thickness between 4000 Angstroms and 6000 Angstroms.
12. The transistor of claim 1 , wherein the third collector region has a thickness between 4500 Angstroms and 5500 Angstroms.
13. The transistor of claim 1 , wherein the transistor is a heterojunction bipolar transistor (HBT).
14. The transistor of claim 1 , further comprising a sub-collector between the collector and the substrate.
15. The transistor of claim 14 , further comprising an aluminum gallium arsenide buffer layer between the sub-collector and the substrate.
16. The transistor of claim 1 , wherein the first dopant type is a p-type dopant and the second dopant type is an n-type dopant.
17. The transistor of claim 1 , wherein the first dopant type is an n-type dopant and the second dopant type is a p-type dopant.
18. The transistor of claim 1 , wherein the base has a dopant concentration that is at least 1E19 cm −3 .
19. The transistor of claim 1 wherein,
the first doping concentration of the first collector region is between 1.5E16 cm −3 and 2.5E16 cm −3 ;
the second doping concentration of the second collector region is between 1.5E16 cm −3 and 2.5E16 cm −3 ; and
the third doping concentration of the third collector region increases from a lower value to a higher value as a function of increasing distance from the second collector region through the third collector region, wherein the lower value of doping concentration is between 1.0E16 cm −3 and 2.0E16 cm −3 and the higher value of doping concentration is between 7.5E16 cm −3 and 10.5E16 cm −3 .
20. The transistor of claim 1 wherein,
the first collector region has a thickness between 1000 Angstroms and 2000 Angstroms;
the second collector region has a thickness between 4000 Angstroms and 6000 Angstroms; and
the third collector region has a thickness between 4500 Angstroms and 5500 Angstroms.