Multi-gate devices and fabricating the same with etch rate modulation
The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a fin structure having first semiconductor layers and second semiconductor layers alternately stacked, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region thereby forming an opening exposing at least one second semiconductor layer. The method also includes implanting an etch rate modifying species into the at least one second semiconductor layer though the opening thereby forming an implanted portion of the at least one second semiconductor layer. The method further includes selectively etching the implanted portion of the at least one second semiconductor layer, recessing end portions of the first semiconductor layers exposed in the opening, and forming an S/D epitaxial layer in the opening.
1. A method of manufacturing a semiconductor device, comprising:
forming a fin structure extruding from a substrate, the fin structure having first semiconductor layers and second semiconductor layers alternately stacked;
forming a sacrificial gate structure over the fin structure;
etching a source/drain (S/D) region of the semiconductor device, which is not covered by the sacrificial gate structure, thereby forming an opening exposing at least one second semiconductor layer;
implanting an etch rate modifying species into the at least one second semiconductor layer though the opening, thereby forming an implanted portion of the at least one second semiconductor layer;
selectively etching the implanted portion of the at least one second semiconductor layer;
recessing end portions of the first semiconductor layers exposed in the opening; and
forming an S/D epitaxial layer in the opening.
2. The method of claim 1 , wherein the etching of the S/D region forms the opening exposing a top surface of the substrate prior to the implanting of the etch rate modifying species.
3. The method of claim 2 , wherein the implanting of the etch rate modifying species implants the etch rate modifying species into end portions of each of the second semiconductor layers.
4. The method of claim 2 , wherein the first semiconductor layers are substantially free of the etch rate modifying species after the implanting of the etch rate modifying species.
5. The method of claim 1 , wherein after the etching of the S/D region, a neighboring first semiconductor layer underneath the at least one second semiconductor layer remains fully covered by the at least one second semiconductor layer.
6. The method of claim 5 , wherein the neighboring first semiconductor layer underneath the at least one second semiconductor layer also receives the etch rate modifying species during the implanting of the etch rate modifying species.
7. The method of claim 1 , wherein the selectively etching of the implanted portion of the at least one second semiconductor layer is prior to the recessing of the end portions of the first semiconductor layers.
8. The method of claim 1 , wherein the selectively etching of the implanted portion of the at least one second semiconductor layer is after the recessing of the end portions of the first semiconductor layers.
9. The method of claim 1 , wherein the etch rate modifying species is selected from the group consisting of As, B, and P.
10. The method of claim 1 , wherein the implanting of the etch rate modifying species includes a slanted implantation process.
11. The method of claim 1 , further comprising:
depositing inner spacers on the end portions of the first semiconductor layers;
removing the first semiconductor layers from a channel region of the semiconductor device; and
forming a metal gate structure replacing the sacrificial gate structure.
12. A method of manufacturing a semiconductor device, comprising:
forming a fin extruding from a substrate, the fin having a plurality of sacrificial layers and a plurality of channel layers, wherein the sacrificial layers and the channel layers are alternately arranged;
removing the sacrificial layers and the channel layers from a source/drain (S/D) region of the fin, thereby forming an S/D trench exposing end portions of the sacrificial layers and channel layers;
laterally recessing the end portions of the sacrificial layers;
implanting an etch rate modifying species into the end portions of the channel layers;
trimming the end portions of the channel layers; and
epitaxially growing an S/D feature in the S/D trench.
13. The method of claim 12 , further comprising:
forming inner spacers on the end portions of the sacrificial layers prior to the implanting of the etch rate modifying species.
14. The method of claim 12 , wherein the sacrificial layers are substantially free of the etch rate modifying species after the implanting of the etch rate modifying species.
15. The method of claim 12 , wherein a top surface of the substrate also receives the etch rate modifying species during the implanting of the etch rate modifying species.
16. The method of claim 12 , wherein the etch rate modifying species is selected from As, B, P, or a combination thereof.