Scintillator panel, radiation detector, and method for manufacturing scintillator panel

1. A scintillator panel comprising: a substrate; a grid-like barrier rib formed on the substrate; and a phosphor layer in a cell separated by the barrier ribs,

wherein the barrier rib comprises on its surface a metallic reflective layer, and an inorganic protective layer mainly containing a nitride, in this order,

wherein the thickness of the inorganic protective layer is 2 nm to 200 nm.

2. The scintillator panel according to claim 1 , wherein the inorganic protective layer comprises silicon nitride.

3. The scintillator panel according to claim 1 , wherein the grid-like barrier rib further comprises an organic protective layer.

4. The scintillator panel according to claim 3 , wherein the grid-like barrier rib comprises on its surface the metallic reflective layer, the inorganic protective layer, and the organic protective layer, in this order.

5. The scintillator panel according to claim 3 , wherein the organic protective layer comprises a fluorine-containing resin.

6. The scintillator panel according to claim 5 , wherein the fluorine-containing resin is amorphous.

7. The scintillator panel according to claim 3 , wherein the organic protective layer comprises polysiloxane.

8. The scintillator panel according to claim 7 , wherein the polysiloxane comprises a hydrolyzed and partially condensed organosilane comprising organosilane represented by the following general formula (1):

wherein,

R 1 represents a monovalent organic group having at least one of an epoxy group and an acid anhydride group;

R 2 and R 3 each represent a hydrogen atom, a C 1-6 alkyl group, a C 2-6 acyl group, or a C 6-16 aryl group;

m represents an integer from 1 to 3;

n represents an integer from 0 to 2;

m+n is 1 to 3;

when m is 2 or more, a plurality of R 1 are optionally the same or different;

when n is 2, a plurality of R 2 are optionally the same or different;

when m+n is 2 or less, a plurality of R 3 are optionally the same or different.

9. The scintillator panel according to claim 8 , wherein the organosilane represented by the general formula (1) comprises at least one of 2-(3,4-epoxycyclohexyl)ethyltrialkoxysilane and 3-trialkoxysilylpropylsuccinic anhydride.

10. The scintillator panel according to claim 1 , wherein the metallic reflective layer comprises silver.

11. The scintillator panel according to claim 10 , wherein the metallic reflective layer contains a silver alloy containing at least one of palladium and copper.

12. The scintillator panel according to claim 1 , wherein the grid-like barrier rib contains 98% by volume or more of a low-softening-point glass having a softening point of 650° C. or lower.

13. A radiation detector comprising the scintillator panel according to claim 1 .

14. The scintillator panel according to claim 1 , wherein the organic protective layer is formed between the barrier rib and the metallic reflective layer.

15. A method of manufacturing scintillator panels, comprising:

a barrier rib formation step of forming barrier ribs on a substrate to obtain a cell separated by the barrier ribs;

a reflective layer formation step of forming a metallic reflective layer on the surface of the barrier rib;

an inorganic protective layer formation step of forming an inorganic protective layer on a surface of the reflective layer; and

a loading step of loading phosphors into the cell separated by the barrier ribs;

wherein the inorganic protective layer comprises a nitride,

wherein the thickness of the inorganic protective layer is 2 nm to 200 nm.

16. The method of manufacturing scintillator panels according to claim 15 ,

wherein the barrier rib further comprises an organic protective layer,

wherein the organic protective layer is formed between the barrier rib and the metallic reflective layer.