Semiconductor package
A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, an encapsulant, a redistribution layer, a polymer pattern and a heat dissipation structure. The semiconductor die has conductive pads at its active side, and is laterally encapsulated by the encapsulant. The redistribution layer is disposed at the active side of the semiconductor die, and spans over a front surface of the encapsulant. The redistribution layer is electrically connected with the conductive pads. The polymer pattern is disposed at a back surface of the encapsulant that is facing away from the front surface of the encapsulant. The semiconductor die is surrounded by the polymer pattern. The heat dissipation structure is in contact with a back side of the semiconductor die that is facing away from the active side, and extends onto the polymer pattern.
1. A semiconductor package, comprising:
a semiconductor die, having a plurality of conductive pads at an active side of the semiconductor die;
an encapsulant, laterally encapsulating the semiconductor die;
a redistribution layer, disposed at the active side of the semiconductor die, and spanning over a front surface of the encapsulant, wherein the redistribution layer is electrically connected with the plurality of conductive pads;
a polymer pattern, disposed at a back surface of the encapsulant that is facing away from the front surface of the encapsulant, wherein the semiconductor die is surrounded by the polymer pattern; and
a heat dissipation structure, directly in physical contact with a back side of the semiconductor die that is facing away from the active side of the semiconductor die, and extending onto the polymer pattern,
wherein the encapsulant is substantially coplanar with a bottom surface of the polymer pattern structure.
2. The semiconductor package according to claim 1 , wherein a non-zero spacing is in between the polymer pattern and the semiconductor die.
3. The semiconductor package according to claim 1 , wherein a sidewall of the polymer pattern is substantially coplanar with a sidewall of the semiconductor die.
4. The semiconductor package according to claim 1 , wherein a peripheral portion of the semiconductor die is covered by the polymer pattern.
5. The semiconductor package according to claim 1 , wherein the heat dissipation structure comprises:
a seed layer, confonnally formed over the polymer pattern and the back side of the semiconductor die; and
a conductive layer, formed over the seed layer.
6. The semiconductor package according to claim 5 , wherein a portion of the conductive layer overlapped with the semiconductor die has a first thickness, another portion of the conductive layer covering the polymer pattern has a second thickness, and the first thickness is greater than the second thickness.
7. The semiconductor package of claim 1 , further comprising a heat spreader, disposed over the heat dissipation structure.
8. The semiconductor package of claim 1 , wherein the semiconductor die further has a plurality of conductive pillars respectively disposed between the redistribution layer and one of the plurality of conductive pads.
9. The semiconductor package of claim 8 , wherein the semiconductor die further has a plurality of solder joints respectively disposed between the redistribution layer and one of the plurality of conductive pillars.
10. The semiconductor package of claim 9 , wherein a surface of the redistribution layer at which the semiconductor die is attached has a recess, and the semiconductor die is located in the recess.
11. The semiconductor package of claim 9 , further comprising an underfill, laterally surrounding the plurality of conductive pillars and the plurality of solder joints.
12. The semiconductor package of claim 1 , further comprising a plurality of electrical connectors, disposed at a surface of the redistribution layer facing away from the semiconductor die, and electrically connected to the redistribution layer.