Semiconductor device and manufacturing method of semiconductor device

1. A semiconductor device comprising:

an oxide in a channel formation region;

a transistor; and

a capacitor,

wherein the transistor comprises:

a first conductor and a second insulator which are over a first insulator;

a third insulator over the first conductor and the second insulator;

a fourth insulator over the third insulator;

a first oxide over the fourth insulator;

a second oxide and a third oxide which are over the first oxide;

a second conductor in contact with a top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the second oxide, and a top surface of the second oxide;

a third conductor in contact with the top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the third oxide, and a top surface of the third oxide;

a fourth oxide over the first oxide;

a fifth insulator over the fourth oxide; and

a fourth conductor over the fifth insulator, and

wherein the capacitor comprises:

a fifth conductor over the first insulator;

the third insulator over the fifth conductor; and

the second conductor over the third insulator.

2. The semiconductor device according to claim 1 ,

wherein each of the first oxide to the third oxide comprises In, an element M and Zn, and

wherein the element M is any one of Al, Ga, Y, and Sn.

3. The semiconductor device according to claim 1 ,

wherein the third insulator comprises any one of aluminum, hafnium, zirconium, and tantalum.

4. The semiconductor device according to claim 1 , wherein the first insulator comprises silicon and nitrogen.