Semiconductor device and manufacturing method thereof
A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.
1 . A manufacturing method of a semiconductor device comprising a capacitor whose leak current is lower than or equal to 1.5×10 −21 (A) per capacitance of 4.3 fF in a measurement environment at a temperature of 125° C., the method comprising the steps of:
forming a first conductor;
forming a second insulator over the first conductor;
forming a third insulator over the second insulator;
performing microwave treatment over the third insulator;
forming a second conductor over the third insulator; and
depositing a fourth insulator over the second conductor and the third insulator,
wherein, by heat treatment, hydrogen contained in the third insulator diffuses into and is absorbed by the second insulator,
wherein the first conductor is one electrode of the capacitor,
wherein the second conductor is the other electrode of the capacitor, and
wherein each of the second insulator and the third insulator is a dielectric of the capacitor.
2 . The manufacturing method of a semiconductor device according to claim 1 ,
wherein the second insulator is a metal oxide deposited by an ALD method and containing aluminum, and
wherein the third insulator is an oxide deposited by a CVD method and containing silicon and nitrogen.
3 . A manufacturing method of a semiconductor device comprising a capacitor whose leak current is lower than or equal to 1.5×10 −21 (A) per capacitance of 4.3 fF in a measurement environment at a temperature of 125° C., the method comprising the steps of:
forming a first conductor;
forming a second insulator over the first conductor;
performing microwave treatment over the second insulator;
forming a third insulator over the second insulator;
forming a second conductor over the third insulator; and
depositing a fourth insulator over the second conductor and the third insulator,
wherein, by heat treatment, hydrogen contained in the second insulator diffuses into and is absorbed by the third insulator,
wherein the first conductor is one electrode of the capacitor,
wherein the second conductor is the other electrode of the capacitor, and
wherein each of the second insulator and the third insulator is a dielectric of the capacitor.
4 . The manufacturing method of a semiconductor device according to claim 3 ,
wherein the second insulator is an oxide deposited by a CVD method and containing silicon and nitrogen, and
wherein the third insulator is a metal oxide deposited by an ALD method and containing aluminum.
5 . The manufacturing method of a semiconductor device according to claim 1 ,
wherein the microwave treatment is performed using a gas containing oxygen, and
wherein a pressure of the microwave treatment is lower than or equal to 133 Pa.
6 . The manufacturing method of a semiconductor device according to claim 3 ,
wherein the microwave treatment is performed using a gas containing oxygen, and
wherein a pressure of the microwave treatment is lower than or equal to 133 Pa.
7 . The manufacturing method of a semiconductor device according to claim 1 ,
wherein a temperature of the heat treatment is higher than or equal to 300° C. and lower than or equal to 550° C., and
wherein time for the heat treatment is longer than or equal to 2 hours and shorter than or equal to 16 hours.
8 . The manufacturing method of a semiconductor device according to claim 3 ,
wherein a temperature of the heat treatment is higher than or equal to 300° C. and lower than or equal to 550° C., and
wherein time for the heat treatment is longer than or equal to 2 hours and shorter than or equal to 16 hours.