Semiconductor device including ferroelectric film and method of manufacturing the same
A first amorphous film including hafnium, oxygen and a first element is formed, and a plurality of grains including a second element which differs from any of hafnium, oxygen and the first element is formed on the first amorphous film. An insulating film including a third element that differs from any of hafnium and the second element is formed over the plurality of grains and the first amorphous film, thereby forming a plurality of grains including the second element and the third element. A second amorphous film including the same materials as those of the first amorphous film is formed on the plurality of grains and the first amorphous film. By performing heat treatment, the first amorphous film and the second amorphous film are crystallized to form a first ferroelectric film which is an orthorhombic and a second ferroelectric film which is an orthorhombic, respectively.
1. A method for manufacturing a semiconductor device, the method comprising:
(a) forming a first amorphous film comprising hafnium, oxygen and a first element;
(b) forming a plurality of first grains comprising a second element different from any of hafnium, oxygen, and the first element on the first amorphous film;
(c) after the (b), forming an insulating film comprising a third element different from any of hafnium, oxygen, the first element and the second element on the first amorphous film;
(d) forming a second amorphous film comprising hafnium, oxygen, and the first element on the insulating film;
(e) forming a first metal film on the second amorphous film; and
(f) after the (e), performing a heat treatment to crystallize the first amorphous film to form a first ferroelectric film that is orthorhombic and to crystallize the second amorphous film to form a second ferroelectric film that is orthorhombic.
2. The method according to claim 1 , wherein,
in the (b), the plurality of first grains are formed separately from each other; and
in the (f), the plurality of first grains function as crystal nuclei of the first ferroelectric film and the second ferroelectric film.
3. The method according to claim 2 , wherein,
in the (c), by forming the insulating film, the plurality of first grains react with the third element to form a plurality of second grains comprising the second element and the third element, and
in the (f), the plurality of second grains function as crystal nuclei.
4. The method according to claim 2 , wherein, in the (f), an orientation of each of the first ferroelectric film and the second ferroelectric film is controlled by stress from the first metal film.
5. The method according to claim 1 , wherein the (b) is performed by a sputtering method.
6. The method according to claim 5 , wherein, in the (c), the insulating film is formed by depositing the insulating film by ALD method for 1 to 4 cycles at temperatures of 100° C. or higher.
7. The method according to claim 1 , wherein the second element is aluminum.
8. The method according to claim 1 , wherein, in the (b), an areal density of the plurality of first grains with respect to upper surface of the first amorphous film is in a range of 1×10 13 /cm 2 ˜1×10 15 /cm 2 .
9. The method according to claim 1 , wherein, in the (f), the heat treatment is performed using a microwave, and the electric field of the microwave is vibrated in longitudinal direction to upper surface of the first metal film.