Semiconductor device, manufacturing method thereof, and electronic apparatus
A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.
1. A light detecting device comprising:
a first semiconductor section including a first semiconductor substrate and a first multilayer wiring layer, the first semiconductor substrate including a plurality of photodiodes and a plurality of transistors;
a second semiconductor section including a second semiconductor substrate and a second multilayer wiring layer, the second multilayer wiring layer including at least one wiring layer and at least one insulation layer, the first and second semiconductor sections being bonded together with a bonding layer such that the first and second multilayer wiring layers face each other;
a first conductor extending through the first semiconductor section to a first portion of the at least one wiring layer of the second multilayer wiring layer and electrically connecting the first multilayer wiring layer with the first portion of the at least one wiring layer of the second multilayer wiring layer; and
a second conductor extending through the first semiconductor section to a second portion of the at least one wiring layer of the second multilayer wiring layer,
wherein the at least one insulation layer is disposed between the bonding layer and the at least one wiring layer of the second multilayer wiring layer in a cross-sectional view.
2. The light detecting device according to claim 1 , wherein the at least one insulation layer includes silicon oxide.
3. The light detecting device according to claim 1 , wherein a thickness of the at least one insulation layer is greater than or equal to 500 nm and less than or equal to 2000 nm.
4. The light detecting device according to claim 1 , wherein the bonding layer includes an adhesive layer.
5. The light detecting device according to claim 1 , wherein the bonding layer includes one or more of a plasma TEOS film, a plasma SiN film, a SiON film, or a SiC film.
6. The light detecting device according to claim 1 , wherein the bonding layer includes silicon carbide.
7. The light detecting device according to claim 1 , wherein the second conductor is electrically connecting to an external wire.
8. The light detecting device according to claim 1 , further comprising a first insulation region, wherein the first insulation region is disposed through the first semiconductor substrate in a vertical direction.
9. The light detecting device according to claim 8 , wherein, in the cross-sectional view, the first insulation region, a first portion of the first semiconductor substrate, and the first conductor are disposed in a horizontal direction in this order.
10. The light detecting device according to claim 9 , wherein the first conductor is disposed between the first insulation region and a second insulation region.
11. The light detecting device according to claim 1 , wherein the first conductor includes a metal material.
12. The light detecting device according to claim 11 , wherein the metal material includes tungsten.
13. The light detecting device according to claim 1 , wherein the second conductor includes a metal material.
14. The light detecting device according to claim 1 , wherein the second conductor includes one or more of a bonding wiring or a solder bump.
15. The light detecting device according to claim 1 , wherein the first and second conductors are disposed in a peripheral region around the plurality of photodiodes and the plurality of transistors.
16. An apparatus comprising:
a light detecting device comprising:
a first semiconductor section including a first semiconductor substrate and a first multilayer wiring layer, the first semiconductor substrate including a plurality of photodiodes and a plurality of transistors;
a second semiconductor section including a second semiconductor substrate and a second multilayer wiring layer, the second multilayer wiring layer including at least one wiring layer and at least one insulation layer, the first and second semiconductor sections being bonded together with a bonding layer such that the first and second multilayer wiring layers face each other;
a first conductor extending through the first semiconductor section to a first portion of the at least one wiring layer of the second multilayer wiring layer and electrically connecting the first multilayer wiring layer with the first portion of the at least one wiring layer of the second multilayer wiring layer; and
a second conductor extending through the first semiconductor section to a second portion of the at least one wiring layer of the second multilayer wiring layer,
wherein the at least one insulation layer is disposed between the bonding layer and the at least one wiring layer of the second multilayer wiring layer in a cross-sectional view.