IP Library Granted Patent US 11,289,556
Granted Patent B2
US 11,289,556 · App. 16/789,613 · Granted Mar 29, 2022

Display device and manufacturing method thereof

Inventors: Jung-Bae Bae (Hanam-si, KR); Won Kyu Kwak (Seongnam-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H01L27/3246H01L27/124H01L27/1222H01L27/3269H01L51/0023H01L51/5237G09G2320/0209H01L51/5092
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Quick Facts
Patent No.
US 11,289,556
App. No.
16/789,613
Granted
Mar 29, 2022
Kind
B2
Abstract

The present disclosure relates to a display device. An exemplary embodiment of the present invention provides a display device including a substrate and an active pattern positioned above the substrate. To the active pattern includes a channel region and a conductive region having a higher carrier concentration than the channel region. A first insulating layer is disposed on the active pattern. A first conductive layer is disposed on the first insulating layer and includes a first conductor. The channel region of the active pattern includes a first channel region overlapping the first conductor along a direction orthogonal to an upper surface of the substrate. The conductive region of the active pattern includes a first conductive region overlapping the first conductor along the direction orthogonal to the upper surface of the substrate.

Claims (74)

1. A display device comprising:

a substrate;

an active pattern positioned above the substrate, wherein the active pattern includes a plurality of channel regions and a plurality of conductive regions having a higher carrier concentration than the channel regions;

a first transistor including a first gate electrode and a first channel region of the plurality of channel regions, the first gate electrode overlapping the first channel region a plan view;

a second transistor including a second gate electrode and a second channel region of the plurality of channel regions, the second gate electrode overlapping the second channel region in the plan view,

a third transistor including a third gate electrode and a third channel region of the plurality of channel regions, the third gate electrode overlapping the third channel region in the plan view;

wherein the plurality of conductive regions of the active pattern includes a first conductive region extending from the second channel region to the third channel region,

wherein the first conductive region includes a first portion overlapping the first gate electrode in the plan view and a second portion connected with the first portion and not overlapping the first gate electrode, and

wherein the first conductive region is separated from the first channel region by an insulating layer.

2. The display device of claim 1 , further comprising:

a first scan line including the second gate electrode and separated from the first gate electrode,

wherein the second portion of the first conductive region overlaps first scar line in the plan view.

3. The display device of claim 2 , wherein

the second portion of the first conductive region is insulated from and crosses the first scan line.

4. The display device of claim 3 , further comprising:

a second scan line including the third gate electrode and separated from the first gate electrode and the first scan line.

5. The display device of claim 2 , wherein

the first conductive region is curved at least two times between the second channel region and the third channel region.

6. A display device comprising:

a substrate;

an active pattern positioned above the substrate, wherein the active pattern includes a plurality of channel regions and a plurality of conductive regions having a higher carrier concentration than the channel regions;

a first transistor including a first gate electrode and a first channel region of the plurality of channel regions, the first gate electrode overlapping the first channel region in a plan view;

a second transistor including a second gate electrode and a second channel region of the plurality of channel regions, the second gate electrode overlapping the second channel region in the plan view;

a third transistor including a third gate electrode and a third channel region of the plurality of channel regions, the third gate electrode overlapping the third channel region in the plan view;

wherein the plurality of conductive regions of the active pattern includes a first conductive region extending from the second channel region to the third channel region, and

wherein the first conductive region includes a first portion overlapping the first gate electrode in the plan view and a second portion connected with the first portion and not overlapping the first gate electrode,

wherein the display device further comprises:

a first insulating layer disposed between the alive pattern and the first gate electrode,

wherein the first insulating layer has a first contact hole overlapping the first gate electrode in the plan view, and

the first conductive region is electrically connected to the first gate electrode through the first contact hole.

7. The display device of claim 6 , further comprising:

a second insulating layer disposed on the first gate electrode; and

a storage line disposed on the second insulating layer,

wherein the storage line includes a third portion overlapping the first gate electrode with the second insulating layer disposed between the third portion and the first gate electrode to form a capacitor.

8. The display device of claim 7 , wherein

the third portion of the storage line has a continuous planar shape with no opening therein.

9. The display device of claim 7 , further comprising:

a third insulating layer disposed on the storage line; and

a driving voltage line disposed on the third insulating layer,

the third insulating layer includes a second contact hole overlapping the third portion in the plan view, and

the driving voltage line is electrically connected to the third portion through the second contact hole.

10. A display device comprising:

a substrate;

an active pattern positioned above the substrate, wherein the active pattern includes a plurality of channel regions and a plurality of conductive regions having a higher carrier concentration than the channel regions;

a first transistor including a first gate electrode and a first channel region of the plurality of channel regions, the first gate electrode overlapping the first channel region in a plan view:

a second transistor including a second gate electrode and a second channel region of the plurality of channel regions, the second gate electrode overlapping the second channel region in the plan view;

a third transistor including a third gate electrode and a third channel region of the plurality of channel regions, the third gate electrode overlapping the third channel region in the plan view;

wherein the plurality of conductive regions of the active pattern includes a first conductive region extending from the second channel region to the third channel region,

wherein the first conductive region includes a first portion in direct contact with the first gate electrode in the plan view and a second portion connected with the first portion and not overlapping the first gate electrode, and

the first conductive region is separated from the first channel region.

11. The display device of claim 10 , further comprising:

a first scan line including the second gate electrode and separated from the first gate electrode,

wherein the second portion of the first conductive region overlaps the first scan hue in the plan view.

12. The display device of claim 11 , wherein

the second portion of the first conductive region is insulated from and crosses the first scan line.

13. The display device of claim 12 , further comprising:

a second scan line including the third gate electrode and separated from the first gate electrode and the first scan line.

14. The display device of claim 11 , wherein

the first conductive region is curved at least two times between the second channel region and the third channel region.

15. The display device of claim 10 , further comprising:

a first insulating layer disposed between the active pattern and the first gate electrode,

wherein the first insulating layer has a first contact hole overlapping the first gate electrode in the plan view, and

the first conductive region is electrically connected to the first gate electrode through the first contact hole.

16. The display device of claim 15 , further comprising:

a second insulating layer disposed on the first gate electrode; and

a storage line disposed on the second insulating layer,

wherein the storage line includes a third portion overlapping the first gate electrode with the second insulating layer disposed between the third portion and the first gate electrode to form a capacitor.

17. The display of claim 16 , wherein

the third portion of the storage line has a continuous planar shape with no opening therein.

18. The display device of claim 16 , further comprising:

a third insulating layer disposed on the storage line; and

a driving voltage line disposed on the third insulating layer,

the third insulating layer includes a second contact hole overlapping the third portion in the plan view, and

the driving voltage line is electrically connected to the third portion through the second contact hole.

Priority Claims (1)
KR 10-2017-0017020 · Feb 7, 2017 · national
Continuity (2)
Continuation 15838624 · Dec 12, 2017
Related Publication 20200185474A1 · Jun 11, 2020
Cited By (4)
US 12,217,692 US 12,408,436 US 12,499,839 US 12,707,724