Solid-state imaging device
A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.
1. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
each one or more of the shallow light receiving portions forming the second light receiving portion is provided with an IR filter which transmits only infrared light and each at least one of the rest of the shallow light receiving portions forming a first light receiving portion is provided with one of color filters,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion, and
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated.
2. The solid-state imaging device of claim 1 , wherein a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion is smaller than a potential barrier of a shallow horizontal separation portion provided between a plurality of the shallow light receiving portions, and the vertical separation portion and the shallow horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
3. The solid-state imaging device of claim 1 , wherein a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a vertical overflow barrier provided under the deep light receiving portion, are smaller than a potential barrier of a deep horizontal separation portion provided so as to surround the deep light receiving portion in a horizontal direction, and the vertical separation portion and the deep horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
4. The solid-state imaging device of claim 1 , wherein a potential barrier of a vertical overflow barrier provided under the deep light receiving portion is smaller than a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a deep horizontal separation portion provided so as to surround the deep light receiving portion in a horizontal direction, and the vertical overflow barrier and the deep horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
5. The solid-state imaging device of claim 1 , wherein, each of the plurality of pixels further includes a first transfer gate for transferring a signal from the first light receiving portion, and the first transfer gate is open and electric charge is discharged from the first light receiving portion through the first transfer gate when imaging is performed using the second receiving portion.
6. The solid-state imaging device of claim 1 ,
wherein, each of the plurality of pixels further includes a second transfer gate for transferring a signal from the second light receiving portion, and
the second transfer gate is open and electric charge is discharged from the second light receiving portion through the second transfer gate when imaging is performed using the first receiving portion.
7. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
the vertical separation portion is not disposed between the shallow light receiving portions and the deep light receiving portion in the second light receiving portion,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion,
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated, and
the vertical separation portion is different in electric potential from the connection portion,
wherein a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion is smaller than a potential barrier of a shallow horizontal separation portion provided between a plurality of the shallow light receiving portions, and
the vertical separation portion and the shallow horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
8. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
the vertical separation portion is not disposed between the shallow light receiving portions and the deep light receiving portion in the second light receiving portion,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion,
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated, and the vertical separation portion is different in electric potential from the connection portion,
wherein a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a vertical overflow barrier provided under the deep light receiving portion, are smaller than a potential barrier of a deep horizontal separation portion provided so as to surround the deep light receiving portion in a horizontal direction, and the vertical separation portion and the deep horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
9. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
the vertical separation portion is not disposed between the shallow light receiving portions and the deep light receiving portion in the second light receiving portion,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion,
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated, and the vertical separation portion is different in electric potential from the connection portion,
wherein a potential barrier of a vertical overflow barrier provided under the deep light receiving portion is smaller than a potential barrier of a vertical separation portion provided between the shallow light receiving portion and the deep light receiving portion, and a potential barrier of a deep horizontal separation portion provided so as to surround the deep light receiving portion in a horizontal direction, and the vertical overflow barrier and the deep horizontal separation portion are formed by introducing impurities into the semiconductor substrate.
10. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
the vertical separation portion is not disposed between the shallow light receiving portions and the deep light receiving portion in the second light receiving portion,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion,
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated, and the vertical separation portion is different in electric potential from the connection portion,
wherein, each of the plurality of pixels further includes a first transfer gate for transferring a signal from the first light receiving portion, and the first transfer gate is open and electric charge is discharged from the first light receiving portion through the first transfer gate when imaging is performed using the second receiving portion.
11. A solid-state imaging device, comprising:
a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes a plurality of shallow light receiving portions formed under a surface of the semiconductor substrate and arranged next to each other at a same depth of the semiconductor substrate, and a deep light receiving portion formed under the shallow light receiving portions and spaced apart from the shallow light receiving portions,
the deep light receiving portion is formed in a region deeper than the shallow light receiving portions, and
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other via a connection portion, which is provided directly below the one or more of the shallow light receiving portions, so as to form a second light receiving portion,
at least one of the rest of the shallow light receiving portions forms a first light receiving portion is separated from the deep light receiving portion by a vertical separation portion, which is provided directly below the at least one of the rest of the shallow light receiving portions forming the first receiving portion,
the vertical separation portion is not disposed between the shallow light receiving portions and the deep light receiving portion in the second light receiving portion,
the connection portion is formed by introducing impurities into the semiconductor substrate in a portion between the one or more of the shallow light receiving portions and the deep light receiving portion,
when light enters the shallow light receiving portions and the second light receiving portion, photoelectric conversion is performed, and a signal electron is generated, and the vertical separation portion is different in electric potential from the connection portion,
wherein, each of the plurality of pixels further includes a second transfer gate for transferring a signal from the second light receiving portion, and
the second transfer gate is open and electric charge is discharged from the second light receiving portion through the second transfer gate when imaging is performed using the first receiving portion.