Substrate processing apparatus and substrate processing method

1. An apparatus for processing a substrate, the apparatus comprising:

a housing having a process space;

a gas supply unit configured to supply gas into the process space;

a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top;

a temperature adjusting plate provided in the housing configured to generate at least one of heating energy and cooling energy;

a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space; and

an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode,

wherein the dielectric plate unit includes:

a first base disposed between the dielectric plate and the temperature adjusting plate, the first base in direct contact with the temperature adjusting plate,

wherein a thermal expansion rate of the first base is more similar to a thermal expansion rate of the temperature adjusting plate rather than a thermal expansion rate of the dielectric plate.

2. The apparatus of claim 1 , wherein the first base is formed of a material different from a material of the dielectric plate.

3. The apparatus of claim 2 , wherein the first base is formed of a material identical to a material of the temperature adjusting plate.

4. The apparatus of claim 1 , wherein the upper electrode unit includes:

a second base configured to surround the first base when viewed from the top, and disposed between the upper electrode and the temperature adjusting plate, and

wherein the first base and the second base are spaced apart from each other to form a gas channel through which gas supplied by the gas supply unit flows.

5. The apparatus of claim 4 , wherein the gas supply unit includes:

a first gas supply part configured to supply process gas, which is excited to be in a plasma state, to the gas channel.

6. The apparatus of claim 4 , wherein the second base is formed of a material identical to a material of the temperature adjusting plate.

7. The apparatus of claim 4 , wherein a thermal expansion rate of the second base is more similar to a thermal expansion rate of the temperature adjusting plate rather than a thermal expansion rate of the upper electrode.

8. The apparatus of claim 4 , wherein a discharge end of the gas channel is formed toward an edge area of the substrate supported by the support unit.

9. The apparatus of claim 4 , wherein the dielectric plate includes:

a gas passage through which gas supplied by the gas supply unit flows, and

wherein a discharge end of the gas passage is formed toward a central area of the substrate supported by the support unit.

10. The apparatus of claim 9 , wherein the gas supply unit includes:

a second gas supply part configured to supply inert gas to the gas passage.

11. The apparatus of claim 1 , wherein the first base comprises a first surface that is in direct contact with the temperature adjusting plate and a second surface coupled to the dielectric plate,

wherein a width of the dielectric plate matches a width of the second surface of the first base.

12. The apparatus of claim 11 , wherein the second surface of the first base comprises a step shape such that a height of a central area of the first base is higher toward the temperature adjusting plate than a height of an edge area of the first base,

wherein a surface the dielectric plate, coupled to the first base, comprises a step shape corresponding to the step shape of the first base.

13. The apparatus of claim 7 , wherein the second base is in direct contact with the temperature adjusting plate.