Filter, optical sensor, solid-state imaging element, and image display device

1. A filter comprising a plurality of different pixels two-dimensionally arranged therein,

wherein said plurality of different pixels includes pixels of a near-infrared cut filter that shield at least a part of light having a wavelength in the near-infrared region and transmit light having a wavelength in the visible region,

wherein said pixels of a near-infrared cut filter include a pixel of a first near-infrared cut filter, and a pixel of a second near-infrared cut filter that shields light at a wavelength in the near-infrared region different from that of the first near-infrared cut filter,

wherein a transmittance of the pixel of the first near-infrared cut filter and the pixel of the second near-infrared cut filter in the entirety of a wavelength range of 400 to 650 nm is 90% or more,

wherein the plurality of different pixels includes a pixel other than the pixels of the near-infrared cut filter, and

wherein the pixel other than the pixels of the near-infrared cut filter is at least one selected from a transparent pixel, a colored pixel, and a pixel of a layer that selectively transmits or shields light at a specific wavelength.

2. The filter according to claim 1 ,

wherein the pixels of the near-infrared cut filter have a maximum absorption wavelength in a wavelength range of 700 to 2,000 nm, and an absorbance Amax/absorbance A550 which is a ratio of the absorbance Amax at a maximum absorption wavelength to the absorbance A550 at a wavelength of 550 nm is 20 to 500.

3. The filter according to claim 1 ,

wherein a difference between the maximum absorption wavelength of the pixels of the first near-infrared cut filter and the maximum absorption wavelength of the pixels of the second near-infrared cut filter is 20 to 1,000 nm.

4. The filter according to claim 1 ,

wherein the pixel of a layer that selectively transmits or shields light at a specific wavelength is at least one pixel selected from a pixel of an infrared transmitting filter or a pixel of an ultraviolet cut filter.

5. The filter according to claim 1 ,

wherein the height difference between the top surfaces of the plurality of different pixels is 20% or less of the film thickness of the thickest pixel.

6. The filter according to claim 1 ,

wherein the height difference between the top surfaces of the plurality of different pixels is 10% or less of the film thickness of the thickest pixel.

7. The filter according to claim 1 ,

wherein the filter further comprises a pixel of an infrared transmitting filter, and a difference between the thicknesses of the pixels is 20% or less of the film thickness of the thickest pixel.

8. The filter according to claim 1 ,

wherein an average refractive index of light at a wavelength of 400 to 700 nm in the pixels of the near-infrared cut filter is 1.4 to 1.9.

9. The filter according to claim 1 ,

wherein the near-infrared cut filter includes a near-infrared absorbing dye, and the near-infrared absorbing dye is a compound having a π-conjugated plane including a monocyclic or fused aromatic ring.

10. The filter according to claim 9 ,

wherein the near-infrared absorbing dye is at least one selected from a pyrrolopyrrole compound, a cyanine compound, and a squarylium compound.

11. The filter according to claim 10 ,

wherein the near-infrared absorbing dye is a pyrrolopyrrole compound.

12. An optical sensor comprising:

the filter according to claim 1 .

13. A solid-state imaging element comprising:

the filter according to claim 1 .

14. An image display device comprising:

the filter according to claim 1 .

15. The filter according to claim 1 , wherein a transmittance of the pixel of the first near-infrared cut filter and the pixel of the second near-infrared cut filter are 20% or less at least one point in a wavelength range of 700 to 2,000 nm.

16. The filter according to claim 1 , wherein an average refractive index of light at a wavelength of 400 to 700 nm in the pixels of the near-infrared cut filter is 1.6 to 1.7.