Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.
1. A semiconductor device structure comprising:
a channel region;
a phosphorus doped silicon arsenide film disposed adjacent to the channel region; and
a doped silicon film disposed adjacent to the phosphorus doped silicon arsenide film;
wherein the doped silicon film comprises a phosphorus doped silicon film with a phosphorus concentration greater than 1×10 21 /cm 3 , and
wherein the phosphorus doped silicon arsenide film is disposed between the channel region and the doped silicon film and substantially prevents diffusion of phosphorous from the doped silicon film into the channel region.
2. The semiconductor device structure of claim 1 wherein the phosphorus doped silicon arsenide film is disposed directly between the channel region and the doped silicon film.
3. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film has a phosphorus concentration of greater than 5×10 20 /cm 3 .
4. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film has an arsenic concentration of greater than 5×10 20 /cm 3 .
5. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film has an electrical resistivity of less than 0.9 mΩ-cm.
6. The semiconductor device structure of claim 5 , wherein the phosphorus doped silicon arsenide film has an electrical resistivity of less than 0.5 mΩ-cm.
7. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film has a thickness of less than 500 Angstroms.
8. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film is formed by exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor within a reaction chamber.
9. The semiconductor device structure of claim 1 , wherein the doped silicon film comprises a phosphorus doped silicon film with an arsenic concentration greater than 1×10 21 /cm 3 .
10. The semiconductor device structure of claim 1 , wherein the phosphorus doped silicon arsenide film comprises crystalline material.
11. A FinFET comprising the semiconductor device structure of claim 1 .
12. The semiconductor device structure of claim 1 , further comprising an isolation region.
13. The semiconductor device structure of claim 12 , further comprising a fin structure extending over a top surface of the isolation region.
14. The semiconductor device structure of claim 13 , further comprising a gate dielectric overlying sidewalls of the fin structure.
15. The semiconductor device structure of claim 14 , further comprising a gate electrode disposed on the gate dielectric.
16. A semiconductor device structure comprising:
a channel region;
a phosphorus doped silicon arsenide film disposed adjacent to the channel region; and
a doped silicon film disposed adjacent to the phosphorus doped silicon arsenide film,
wherein the phosphorus doped silicon arsenide film has a phosphorus concentration of greater than 1×10 21 /cm 3 , and
wherein the phosphorus doped silicon arsenide film is disposed between the channel region and the doped silicon film and substantially prevents diffusion of dopants from the doped silicon film into the channel region.
17. The semiconductor device structure of claim 16 , wherein the doped silicon film comprises a phosphorus doped silicon film with a phosphorus concentration greater than 1×10 21 /cm 3 .
18. The semiconductor device structure of claim 16 , wherein the phosphorus doped silicon arsenide film has an arsenic concentration of greater than 4×10 20 /cm 3 .
19. A semiconductor device structure comprising:
a channel region;
a phosphorus doped silicon arsenide film disposed adjacent to the channel region; and
a doped silicon film disposed adjacent to the phosphorus doped silicon arsenide film,
wherein the phosphorus doped silicon arsenide film is disposed between the channel region and the doped silicon film and substantially prevents diffusion of dopants from the doped silicon film into the channel region, and
wherein the phosphorus doped silicon arsenide film has a thickness of less than 50 Angstroms.
20. The semiconductor device structure of claim 18 , wherein the doped silicon film comprises a phosphorus doped silicon film with a phosphorus concentration greater than 1×10 21 /cm 3 and wherein the phosphorus doped silicon arsenide film has an arsenic concentration of greater than 4×10 20 /cm 3 .