Thin-film transistor substrate and display apparatus comprising the same
A thin-film transistor substrate and a display apparatus including the same includes a first thin-film transistor on a substrate. The first thin-film transistor includes a first semiconductor layer having a first channel area, a first source area, and a first drain area; a first lower gate electrode between the substrate and the first semiconductor layer; a first upper gate electrode on the first semiconductor layer and overlapping the first channel area; and a first electrode layer on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area. The first lower gate electrode overlaps the first channel area and the first drain area.
1. A thin-film transistor substrate comprising:
a first thin-film transistor disposed on a substrate, the first thin-film transistor comprising:
a first semiconductor layer comprising a first channel area, a first source area, and a first drain area;
a first lower gate electrode disposed between the substrate and the first semiconductor layer, the first lower gate electrode including an end adjacent to the first source area that coincides with an end of the first channel area in a plan view;
a first upper gate electrode disposed on the first semiconductor layer and overlapping the first channel area; and
a first electrode layer disposed on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area, wherein
the first lower gate electrode overlaps the first channel area and the first drain area.
2. The thin-film transistor substrate of claim 1 , wherein the first lower gate electrode overlaps the first semiconductor layer and does not overlap the first source area.
3. The thin-film transistor substrate of claim 1 , wherein
the first upper gate electrode includes an end adjacent to the first source area,
and
the end of the first upper gate electrode and the end of the lower gate electrode coincide with each other in the plan view.
4. The thin-film transistor substrate of claim 3 , wherein a distance between the first lower gate electrode and a conductive layer disposed on the substrate is a same as a distance between the first upper gate electrode and the conductive layer in a plan view.
5. The thin-film transistor substrate of claim 4 , wherein the conductive layer is a scan line.
6. The thin-film transistor substrate of claim 1 , wherein the first semiconductor layer comprises a silicon semiconductor material or an oxide semiconductor material.
7. The thin-film transistor substrate of claim 1 , further comprising:
a second thin-film transistor disposed on the substrate, the second thin-film transistor comprising:
a second semiconductor layer;
a second gate electrode partially overlapping the second semiconductor layer; and
a second electrode layer disposed on the second gate electrode and electrically connected to the second semiconductor layer, wherein
the first semiconductor layer comprises an oxide semiconductor material, and
the second semiconductor layer comprises a silicon semiconductor material.
8. The thin-film transistor substrate of claim 7 , further comprising:
a third thin-film transistor disposed on the substrate, the third thin-film transistor comprising:
a third semiconductor layer comprising a third channel area, a third source area, and a third drain area;
a third lower gate electrode disposed between the substrate and the third semiconductor layer;
a third upper gate electrode disposed on the third semiconductor layer and overlapping the third channel area; and
a third electrode layer disposed on the third upper gate electrode and electrically connected to at least one of the third source area and the third drain area, wherein
the third lower gate electrode overlaps the third channel area and the third drain area, and
the third semiconductor layer comprises an oxide semiconductor material.
9. The thin-film transistor substrate of claim 8 , wherein the first semiconductor layer and the third semiconductor layer are integral with each other and have an isolated shape.
10. The thin-film transistor substrate of claim 8 , wherein the third lower gate electrode overlaps the third semiconductor layer and does not overlap the third source area.
11. The thin-film transistor substrate of claim 8 , wherein
the third upper gate electrode includes an end adjacent to the third source area,
the third lower gate electrode includes an end adjacent to the third source area, and
the end of the third upper gate electrode and the end of the third lower gate electrode coincide with each other in a plan view.
12. The thin-film transistor substrate of claim 8 , wherein
the first thin-film transistor is a compensation thin-film transistor, and
the third thin-film transistor is an initialization thin-film transistor.
13. The thin-film transistor substrate of claim 7 , comprising:
a boost capacitor comprising a lower electrode and an upper electrode, wherein
the lower electrode and the second gate electrode are disposed on a same layer, and
the upper electrode and the first semiconductor layer are disposed on a same layer.
14. The thin-film transistor substrate of claim 13 , wherein the upper electrode extends from the first semiconductor layer.
15. A display apparatus comprising:
a first thin-film transistor disposed on a substrate; and
a display element electrically connected to the first thin-film transistor, wherein
the first thin-film transistor comprising:
a first semiconductor layer comprising a first channel area, a first source area, and a first drain area;
a first lower gate electrode disposed between the substrate and the first semiconductor layer, the first lower gate electrode including an end adjacent to the first source area that coincides with an end of the first Channel area in a plan view;
a first upper gate electrode disposed on the first semiconductor layer and overlapping the first channel area; and
a first electrode layer disposed on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area, and
the first lower gate electrode overlaps the first channel area and the first drain area.
16. The display apparatus of claim 15 , wherein the first lower gate electrode overlaps the first semiconductor layer and does not overlap the first source area.
17. The display apparatus of claim 15 , wherein
the first upper gate electrode includes an end adjacent to the first source area,
and
the end of the first upper gate electrode and the end of the first lower gate electrode coincide with each other in a plan view.
18. The display apparatus of claim 15 , wherein the first semiconductor layer comprises a silicon semiconductor material or an oxide semiconductor material.
19. The display apparatus of claim 15 , further comprising:
a second thin-film transistor disposed on the substrate, the second thin-film transistor comprising:
a second semiconductor layer;
a second gate electrode partially overlapping the second semiconductor layer; and
a second electrode layer disposed on the second gate electrode and electrically connected to the second semiconductor layer, wherein
the first semiconductor layer comprises an oxide semiconductor material, and
the second semiconductor layer comprises a silicon semiconductor material.
20. The display apparatus of claim 19 , further comprising:
a third thin-film transistor disposed on the substrate, the third thin-film transistor comprising:
a third semiconductor layer comprising a third channel area, a third source area, and a third drain area;
a third lower gate electrode disposed between the substrate and the third semiconductor layer;
a third upper gate electrode disposed on the third semiconductor layer and overlapping the third channel area; and
a third electrode layer disposed on the third upper gate electrode and electrically connected to at least one of the third source area and the third drain area, wherein
the third lower gate electrode overlaps the third channel area and the third drain area, and
the third semiconductor layer comprises an oxide semiconductor material.
21. The display apparatus of claim 20 , wherein the third lower gate electrode overlaps the third semiconductor layer and does not overlap the third source area.
22. The display apparatus of claim 20 , wherein
the third upper gate electrode includes an end adjacent to the third source area,
the third lower gate electrode includes an end adjacent to the third source area, and
the end of the third upper gate electrode and the end of the third lower gate electrode coincide with each other in a plan view.
23. The display apparatus of claim 20 , wherein the first semiconductor layer and the third semiconductor layer are integral with each other and have an isolated shape.
24. The display apparatus of claim 19 , comprising:
a boost capacitor comprising a lower electrode and an upper electrode, wherein
the lower electrode and the second gate electrode are disposed on a same layer, and
the upper electrode and the first semiconductor layer are disposed on a same layer.
25. The display apparatus of claim 19 , comprising:
a storage capacitor comprising:
the second gate electrode as a first electrode; and
a second electrode disposed on the second gate electrode, wherein
the first lower gate electrode and the second electrode are disposed on a same layer.