Semiconductor device and method for manufacturing the same
A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the at least one side surface. The first adhesive layer and the first resin layer contact each other.
1. A semiconductor device, comprising:
a first semiconductor chip having a first surface and a second surface opposite to the first surface;
a first resin layer provided on the first surface;
a second semiconductor chip including:
a third surface and a fourth surface opposite to the third surface; and
a connection bump on the third surface;
a wiring substrate connected to the connection bump; and
a second resin layer that covers the connection bump between the second semiconductor chip and the wiring substrate, and further covers at least one side surface of the second semiconductor chip connecting the third surface and the fourth surface,
wherein the first resin layer covers an upper portion of the at least one side surface,
the second resin layer covers a lower portion of the at least one side surface, and
the first resin layer and the second resin layer contact each other.
2. The semiconductor device according to claim 1 ,
wherein the second resin layer includes a recess between the first resin layer and the at least one side surface, and
the first resin layer includes a protruding portion contacting the recess.
3. The semiconductor device according to claim 1 ,
wherein the second resin layer covers the second semiconductor chip by extending from the third surface to halfway of the at least one side surface.
4. The semiconductor device according to claim 1 ,
wherein the first resin layer covers the second semiconductor chip by extending from the fourth surface to halfway of the at least one side surface.
5. The semiconductor device according to claim 1 ,
wherein an outer edge of the first semiconductor chip is offset from an outer edge of the second semiconductor chip, and
the second resin layer is further provided between the first surface of the first semiconductor chip and the wiring substrate.
6. The semiconductor device according to claim 1 , further comprising:
a third semiconductor chip provided between the first semiconductor chip and the wiring substrate around a periphery of the second semiconductor chip,
wherein an outer edge of the first semiconductor chip is offset from an outer edge of the second semiconductor chip.
7. The semiconductor device according to claim 1 , further comprising:
a spacer chip provided between the first semiconductor chip and the wiring substrate around a periphery of the second semiconductor chip; and
a third resin layer that embeds a periphery of the spacer chip,
wherein an outer edge of the first semiconductor chip is offset from an outer edge of the second semiconductor chip.
8. The semiconductor device according to claim 7 , wherein each of the second and third resin layers includes an underfill or a non-conductive paste (NCP).