Back-end-of-line integrated metal-insulator-metal capacitor
A low cost capacitor (e.g., metal-insulator-metal (MIM) capacitor) is included in the back-end-of-line layers for effective routing and area savings. The capacitor has a first electrode (e.g., a first terminal of the capacitor) including a conductive back-end-of-line (BEOL) layer and a second electrode (e.g., a second terminal of the capacitor) including a nitride-based metal. The capacitor also has an etch stop layer (e.g., a dielectric of the capacitor) between the first electrode and the second electrode.
1. A capacitor, comprising:
a first electrode comprising a conductive back-end-of-line layer;
a second electrode comprising a nitride based metal;
an etch stop layer between the first electrode and the second electrode;
a conductive plate above the etch stop layer; and
a dielectric between the conductive plate and the etch stop layer,
wherein each of the first and the second electrodes includes a via connecting to upper layer routing, and
wherein the upper layer routing includes corresponding power-supply rails for the first and second electrodes.
2. The capacitor of claim 1 , in which the etch stop layer comprises a high-K material or a combination of the high-K material and a low-K material.
3. The capacitor of claim 1 , in which the etch stop layer comprises a combination of oxygen doped carbon and aluminum nitride.
4. The capacitor of claim 3 , in which the etch stop layer further comprises oxygen doped aluminum.
5. The capacitor of claim 1 , in which the etch stop layer is in one layer of a lower four back-end-of-line layers.
6. The capacitor of claim 1 , in which the etch stop layer comprises a thickness between five to ten nanometers.
7. The capacitor of claim 1 , in which the first electrode comprises copper (Cu), cobalt (Co), or ruthenium (Ru).
8. The capacitor of claim 1 , in which the second electrode comprises titanium nitride (TiN), tantalum nitride (TaN) or tungsten nitride (WN).
9. A method of fabricating a capacitor, comprising:
forming a first electrode comprising a conductive back-end-of-line (BEOL) layer;
depositing an etch stop layer on the first electrode;
fabricating a second electrode, including a nitride based metal, on the etch stop layer;
forming a conductive plate above the etch stop layer;
forming a dielectric between the conductive plate and the etch stop layer; and
forming each of the first and the second electrodes to upper layer routing,
wherein the upper layer routing includes corresponding power-supply rails for the first and second electrodes.
10. The method of claim 9 , in which depositing the etch stop layer comprises depositing a high-K material or a combination of the high-K material and a low-K material.
11. The method of claim 9 , in which depositing the etch stop layer comprises depositing a combination of oxygen doped carbon and aluminum nitride.
12. The method of claim 9 , in which depositing the etch stop layer further comprises depositing oxygen doped aluminum.
13. The method of claim 9 , further comprising depositing the etch stop layer in one layer of a lower four back-end-of-line layers.
14. The method of claim 9 , in which depositing the etch stop layer comprises depositing the etch stop layer with a thickness between five to ten nanometers.
15. A capacitor, comprising:
means for interconnecting fabricated devices and wiring interconnects on a substrate;
an electrode comprising a nitride based metal;
an etch stop layer between the interconnecting means and the electrode;
a conductive plate above the etch stop layer; and
a dielectric between the conductive plate and the etch stop layer,
wherein the electrode includes a via connecting to upper layer routing, and
wherein the upper layer routing includes a power-supply rail for the electrode.
16. The capacitor of claim 15 , in which the etch stop layer comprises a high-K material or a combination of the high-K material and a low-K material.
17. The capacitor of claim 15 , in which the etch stop layer comprises a combination of oxygen doped carbon and aluminum nitride.
18. The capacitor of claim 17 , in which the etch stop layer further comprises oxygen doped aluminum.
19. The capacitor of claim 15 , in which the etch stop layer is in one layer of a lower four back-end-of-line layers.
20. The capacitor of claim 15 , in which the etch stop layer comprises a thickness between five to ten nanometers.